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AM2381P PDF预览

AM2381P

更新时间: 2024-09-15 07:16:55
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 68K
描述
P-Channel 80-V (D-S) MOSFET

AM2381P 数据手册

 浏览型号AM2381P的Datasheet PDF文件第2页浏览型号AM2381P的Datasheet PDF文件第3页 
Analog Power  
AM2381P  
P-Channel 80-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
0.5 @ VGS = -10V  
0.6 @ VGS = -4.5V  
1.4  
1.3  
-80  
Low rDS(on) provides higher efficiency and  
extends battery life  
G
S
Low thermal impedance copper leadframe  
SOT-23 saves board space  
D
Fast switching speed  
High performance trench technology  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-80  
20  
V
A
TA=25oC  
TA=70oC  
0.9  
0.7  
1.6  
-1  
Continuous Drain Currenta  
ID  
Pulsed Drain Currentb  
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
A
TA=25oC  
TA=70oC  
1.3  
0.8  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
t <= 5 sec  
Steady-State  
100  
Maximum Junction-to-Ambienta  
oC/W  
RTHJA  
166  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM2381_A  
PRELIMINARY  

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