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AM2370N PDF预览

AM2370N

更新时间: 2024-09-15 12:52:15
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 153K
描述
N-Channel 100V (D-S) MOSFET

AM2370N 数据手册

 浏览型号AM2370N的Datasheet PDF文件第2页浏览型号AM2370N的Datasheet PDF文件第3页 
Analog Power  
AM2370N  
N-Channel 100V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
V (V)  
rDS(on) ()  
ID (A)  
1.8  
1.6  
DS  
0.280 @V = 10 V  
GS  
100  
0.355 @V = 5.5V  
GS  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOT-23 saves board space  
Fast switching speed  
High performance trench technology  
G
S
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
VDS  
VGS  
ID  
IDM  
IS  
100  
±20  
1.8  
±10  
1.1  
V
Gate-Source Voltage  
Continuous Drain Currenta  
Pulsed Drain Currentb  
TA=25 C  
o
A
Continuous Source Current (Diode Conduction)a  
A
W
oC  
a
o
PD  
Power Dissipation  
TA=25 C  
1.30  
Operating Junction and Storage Temperature Range  
T, T -55 to 150  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Typ  
93  
130  
Max  
110  
150  
Symbol  
RthJA  
t <= 10 sec  
Maximum Junction-to-Ambienta  
oC/W  
Steady State  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM2370_B  
PRELIMINARY  

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