Datasheet > AM2361P

AM2361P

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
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描述
P-Channel 60-V (D-S) MOSFET

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AM2361P 数据手册

Analog Power

AM2361P

P-Channel 60-V (D-S) MOSFET

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r_DS(on)assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.155 @ V_GS= -10V

0.230 @ V_GS= -4.5V

3.4

2.8

-60

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

Extended VGS range (±25) for battery pack

applications

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-60

±20

T_A=25^oC

T_A=70^oC

3.4

2.8

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

±15

-1.7

1.3

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

^oC

0.8

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

100

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM2361_A

April, 2005 - Rev. A

PRELIMINARY

12 3

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