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AM2345PE PDF预览

AM2345PE

更新时间: 2024-09-15 12:26:43
品牌 Logo 应用领域
ANALOGPOWER /
页数 文件大小 规格书
3页 183K
描述
P - Channel 40V (D-S) MOSFET

AM2345PE 数据手册

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Analog Power  
AM2345PE  
P - Channel 40V (D-S) MOSFET  
These miniature surface mount MOSFETs  
utilize a high cell density trench process to  
provide low rDS(on) and to ensure minimal  
power loss and heat dissipation. Typical  
applications are DC-DC converters and  
power management in portable and  
battery-powered products such as  
PRODUCT SUMMARY  
V (V)  
rDS(on) ()  
ID (A)  
DS  
0.164 @V = -10 V -3.2  
GS  
-40  
0.260 @V = -4.5V -2.6  
GS  
computers, printers, PCMCIA cards,  
cellular and cordless telephones.  
SOT-23  
S
Top View  
G
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOT-23 saves board space  
G
S
D
D
P-Channel MOSFET  
Fast switching speed  
High performance trench technology  
ESD Protected  
2000V  
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol Ratings Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-40  
±20  
V
TA=25oC  
TA=70oC  
± 3.2  
± 2.7  
±10  
0.4  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
A
TA=25oC  
TA=70oC  
1.25  
0.8  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol Maximum Units  
t <= 5 sec  
Steady-State  
100  
Maximum Junction-to-Ambienta  
oC/W  
RTHJA  
150  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM2345PE_A  
PRELIMINARY  

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