Datasheet > AM2314N

AM2314N

更新时间： 2024-09-15 12:52:15

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描述
N-Channel 20V (D-S) MOSFET

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AM2314N 数据手册

Analog Power

AM2314N

N-Channel 20V (D-S) MOSFET

These miniature surface mount MOSFETs

utilize High Cell Density process. Low r_DS(on)

assures minimal power loss and conserves

energy, making this device ideal for use in

power management circuitry. Typical

applications are power switch, power

management in portable and battery-powered

products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.032 @ V_GS= 4.5 V

0.044 @ V_GS= 2.5V

4.6

3.9

•

Low Gate Charge

Fast Switch

Miniature SOT-23 Surface Mount Package

Saves Board Space

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±12

T_A=25^oC

T_A=70^oC

4.0

3.1

±20

1.6

1.3

0.8

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

100

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM2314_E

July, 2004 - Rev. A

PRELIMINARY

12 3 4 5

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