Datasheet > AM2313P

AM2313P

更新时间： 2024-11-04 12:52:15

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	245K
描述
P - Channel Logic Level MOSFET

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AM2313P 数据手册

Analog Power

AM2313P

P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs

utilize High Cell Density process. Low

r_DS(on)assures minimal power loss and

conserves energy, making this device ideal

for use in power management circuitry.

Typical applications are voltage control

small signal switch, power management in

portable and battery-powered products and

most low current high side switch.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

-0.2

10 @ V_GS= -10 V

20 @ V_GS= -4.5V

-60

-0.12

•

Low r_DS(on)Provides Higher Efficiency and

Extends Battery Life

•

Fast Switch

Low Gate Charge

High Saturation Current

Miniature SOT-23 Surface Mount Package

Saves Board Space

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-60

±20

T_A=25^oC

T_A=70^oC

±0.12

±0.09

±1

Continuous Drain Current^a

I_D

Pulsed Drain Current^b

Continuous Source Current (Diode Conduction)^a

Power Dissipation^a

I_DM

I_S

0.24

0.36

0.29

T_A=25^oC

T_A=70^oC

P_D

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

350

400

t <= 5 sec

Steady-State

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM2313_B

July, 2002 - Rev. A

PRELIMINARY

12 3 4 5

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