Datasheet > AM1523CE

AM1523CE

更新时间： 2025-08-10 07:16:55

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
3页	97K
描述
N-Channel 20-V (D-S) MOSFET

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AM1523CE 数据手册

Analog Power

AM1523CE

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

90 @ V_GS= 4.5V

120 @ V_GS= 2.5V

200 @ V_GS= -4.5V

370 @ V_GS= -2.5V

1.5

1.3

-1.0

-0.5

-20

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SC70-6 saves board space

•

Fast switching speed

High performance trench technology

ABSOLUTE MAXIMUM RATINGS (T_A= 25 C UNLESS OTHERWISE NOTED)

Parameter Symbol N-Channel P-Channel Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

-20

-8

T_A=25^oC

T_A=70^oC

1.5

Continuous Drain Current^a

I_D

1.3

0.7

0.9

Pulsed Drain Current^b

-1.2

-0.25

0.3

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25^oC

0.25

0.3

Power Dissipation^a

P_D

T_A=70^oC

0.21

^oC

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

415

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

460

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM1523CE_A

PRELIMINARY

12 3

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