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AM1517-012 PDF预览

AM1517-012

更新时间: 2024-11-15 22:39:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频和微波射频双极晶体管放大器局域网通信
页数 文件大小 规格书
6页 89K
描述
SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1517-012 技术参数

生命周期:Obsolete包装说明:0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S042, AMPAC-2
针数:2Reach Compliance Code:compliant
风险等级:5.82Is Samacsys:N
外壳连接:BASE最大集电极电流 (IC):1.2 A
配置:SINGLE最小直流电流增益 (hFE):15
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):27 W
最小功率增益 (Gp):8.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

AM1517-012 数据手册

 浏览型号AM1517-012的Datasheet PDF文件第2页浏览型号AM1517-012的Datasheet PDF文件第3页浏览型号AM1517-012的Datasheet PDF文件第4页浏览型号AM1517-012的Datasheet PDF文件第5页浏览型号AM1517-012的Datasheet PDF文件第6页 
AM1517-012  
RF & MICROWAVE TRANSISTORS  
SATELLITE COMMUNICATIONS APPLICATIONS  
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION  
EMITTER SITE BALLASTED  
:1 VSWR CAPABILITY  
LOW THERMAL RESISTANCE  
INPUT/OUTPUT MATCHING  
METAL/CERAMIC HERMETIC PACKAGE  
POUT  
12 W MIN. WITH 8.5 dB GAIN  
.400 x .400 2NLFL (S042)  
=
hermeticallysealed  
ORDER CODE  
BRANDING  
1517-12  
AM1517-012  
PIN CONNECTION  
DESCRIPTION  
The AM1517-012 power transistor is designed spe-  
cifically for Satellite communications applications  
in the 1.5 1.7 GHz frequency range.  
The device is capable of withstanding any mis-  
match load condition at any phase angle (VSWR  
:1) under full rated conditions. The unit is an  
overlay, emitter site ballasted, geometry utilizing  
a Refractory/Gold metallization system.  
The AM1517-012 is supplied in the AMPAC Her-  
metic/Ceramic package with internal Input/Output  
matching structures.  
1. Collector  
2. Base  
3. Emitter  
4. Base  
°
= 25 C)  
ABSOLUTE MAXIMUM RATINGS (T  
case  
Symbol  
PDISS  
IC  
Parameter  
Value  
27  
Unit  
Power Dissipation*  
Device Current*  
(TC 100°C)  
W
A
1.25  
30  
VCC  
TJ  
Collector-Supply Voltage*  
Junction Temperature  
Storage Temperature  
V
°
200  
C
C
°
TSTG  
65 to +200  
THERMAL DATA  
RTH(j-c)  
Junction-Case Thermal Resistance*  
5.5  
°C/W  
*Applies only to rated RF amplifier operation  
September 1992  
1/6  

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