Datasheet > AM1320N

AM1320N

更新时间： 2022-12-20 04:12:46

品牌	Logo	应用领域
ANALOGPOWER		/
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4页	189K
描述
N-Channel 20V (D-S) MOSFET

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AM1320N 数据手册

Analog Power

AM1320N

N-Channel 20V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r_DS(on)and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

PRODUCT SUMMARY

V (V)

r_DS(on)(Ω)

I_D(A)

0.058 @V = 4.5 V 2.0

0.082 @V = 2.5V

1.7

•

Low r_DS(on)provides higher efficiency and

extends battery life

Low thermal impedance copper leadframe

SC70-3 saves board space

Fast switching speed

High performance trench technology

•

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ^oC UNLESS OTHERWISE NOTED)

Parameter Symbol Maximum Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

±8

2.0

1.7

±20

1.6

T_A=25 C

Continuous Drain Current^a

Pulsed Drain Current^b

I_D

T_A=70 C

I_DM

I_S

Continuous Source Current (Diode Conduction)^a

T_A=25 C

0.34

0.22

P_D

Power Dissipation

T_A=70 C

^oC

Operating Junction and Storage Temperature Range

T, T -55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

t <= 5 sec

Steady-State

100

Maximum Junction-to-Ambient^a

^oC/W

R_THJA

166

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS-AM1320_A

PRELIMINARY

12 3 4

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