Datasheet > AM12N65P

AM12N65P

更新时间： 2024-02-03 22:24:22

品牌	Logo	应用领域
ANALOGPOWER		/
页数	文件大小	规格书
5页	332K
描述
N-Channel 650-V (D-S) MOSFET

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AM12N65P 数据手册

Analog Power

AM12N65P

N-Channel 650-V (D-S) MOSFET

PRODUCT SUMMARY

Key Features:

r_DS(on)(mΩ)

VDS (V)

650

ID (A)

12^a

• Low r_DS(on)trench technology

• Low thermal impedance

• Fast switching speed

800 @ V_GS= 10V

850 @ V_GS= 6V

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

DRAIN

connected

to TAB

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

V_GS

I_D

Limit

650

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current ^a

T_C=25°C

Pulsed Drain Current ^b

I_DM

Continuous Source Current (Diode Conduction) ^a

Power Dissipation

I_S

P_D

300

°C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to 175

THERMAL RESISTANCE RATINGS

Parameter

Symbol Maximum Units

Maximum Junction-to-Ambient ^a

Maximum Junction-to-Case

R_θJA

62.5

°C/W

R_θJC

Notes

Calculated continuous current based on maximum allowable junction temperature.

Pulse width limited by maximum junction temperature

Publication Order Number:

DS_AM12N65P_1A

12 3 4 5

中文翻译

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