5秒后页面跳转
AS4LC4M4F1-60JC PDF预览

AS4LC4M4F1-60JC

更新时间: 2024-02-25 17:17:58
品牌 Logo 应用领域
ALSC 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
14页 269K
描述
4M×4 CMOS DRAM (Fast Page) 3.3V Family

AS4LC4M4F1-60JC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:SOP, TSOP24/26,.36
针数:26/24Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.81Is Samacsys:N
访问模式:FAST PAGE最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/SELF REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G24JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:24
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSOP24/26,.36
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:3.3 V
认证状态:Not Qualified刷新周期:2048
自我刷新:YES最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.11 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AS4LC4M4F1-60JC 数据手册

 浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第2页浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第3页浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第4页浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第5页浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第6页浏览型号AS4LC4M4F1-60JC的Datasheet PDF文件第7页 
May 2001  
AS4LC4M4F1  
®
4M×4 CMOS DRAM (Fast Page) 3.3V Family  
Features  
• Refresh  
• Organization: 4,194,304 words × 4 bits  
- 2048 refresh cycles, 32 ms refresh interval  
- RAS-only or CAS-before-RAS refresh or self-refresh  
• TTL-compatible, three-state I/O  
• JEDEC standard package  
- 300 mil, 24/26-pin SOJ  
• 3.3V power supply  
• High speed  
- 50/60 ns RAS access time  
- 25/30 ns column address access time  
- 12/15 ns CAS access time  
• Low power consumption  
- Active: 500 mW max  
- Standby: 3.6 mW max, CMOS I/O  
• Fast page mode  
• Latch-up current 200 mA  
• ESD protection 2000 volts  
• Industrial and commercial temperature available  
Pin arrangement  
Pin designation  
Pin(s)  
A0 to A10  
RAS  
Description  
SOJ  
TSOP*  
Address inputs  
Row address strobe  
Column address strobe  
Write enable  
Input/output  
Output enable  
Power  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
1
2
3
4
5
6
19  
18  
17  
16  
15  
14  
I/O0  
I/O1  
WE  
RAS  
NC  
I/O0  
I/O1  
WE  
RAS  
NC  
CAS  
A9  
A9  
WE  
A10  
A8  
A7  
A6  
A5  
A4  
A10  
A8  
A7  
A6  
A5  
A4  
GND  
8
9
I/O0 to I/O3  
OE  
8
9
10  
11  
12  
13  
19  
18  
17  
16  
15  
14  
26  
25  
24  
23  
22  
21  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
10  
11  
12  
13  
VCC  
GND  
GND  
Ground  
*TSOP availability to be determined  
Selection guide  
Symbol  
AS4LC4M4F1-50  
AS4LC4M4F1-60  
Unit  
ns  
Maximum RAS access time  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
50  
25  
60  
30  
Maximum column address access time  
Maximum CAS access time  
ns  
12  
15  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
13  
15  
ns  
80  
100  
30  
ns  
tPC  
25  
ns  
ICC1  
ICC5  
120  
1.0  
110  
1.0  
mA  
mA  
Maximum CMOS standby current  
5/16/01; v.1.0 Restored  
Alliance Semiconductor  
P. 1 of 14  
Copyright © Alliance Semiconductor. All rights reserved.  

与AS4LC4M4F1-60JC相关器件

型号 品牌 描述 获取价格 数据表
AS4LC4M4F1-60JI ALSC 4M×4 CMOS DRAM (Fast Page) 3.3V Family

获取价格

AS4LC4M4F1-60TC ALSC 4M×4 CMOS DRAM (Fast Page) 3.3V Family

获取价格

AS4LC4M4F1-60TI ALSC 4M×4 CMOS DRAM (Fast Page) 3.3V Family

获取价格

AS4LC4M4S0-15TC ETC x4 SDRAM

获取价格

AS4LC512K32S0-100TQC ALSC Synchronous DRAM, 512KX32, 9ns, CMOS, PQFP100

获取价格

AS4LC512K32S0-133TQC ALSC Synchronous DRAM, 512KX32, 7ns, CMOS, PQFP100

获取价格