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AS4C4M4F1-50TI PDF预览

AS4C4M4F1-50TI

更新时间: 2024-01-19 02:08:44
品牌 Logo 应用领域
ALSC 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
18页 271K
描述
5V 4M×4 CMOS DRAM (Fast Page mode)

AS4C4M4F1-50TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:SOP, TSOP24/26,.36
针数:26/24Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.9Is Samacsys:N
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G24JESD-609代码:e0
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:24
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX4
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:TSOP24/26,.36
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified刷新周期:2048
自我刷新:YES最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.135 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

AS4C4M4F1-50TI 数据手册

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AS4C4M4F0  
AS4C4M4F1  
®
5V 4M×4 CMOS DRAM (Fast Page mode)  
Features  
• Organization: 4,194,304 words × 4 bits  
• High speed  
• TTL-compatible, three-state I/O  
• JEDEC standard package  
- 300 mil, 24/26-pin SOJ  
- 300 mil, 24/26-pin TSOP  
• Latch-up current 200 mA  
• ESD protection 2000 mV  
- 50/60 ns RAS access time  
- 25/30 ns column address access time  
- 12/15 ns CAS access time  
• Low power consumption  
- Active: 908 mW max  
- Standby: 5.5 mW max, CMOS I/O  
• Fast page mode  
• Industrial and commercial temperature available  
• Refresh  
- 4096 refresh cycles, 64 ms refresh interval for  
AS4C4M4F0  
- 2048 refresh cycles, 32 ms refresh interval for  
AS4C4M4F1  
- RAS-only or CAS-before-RAS refresh or self-refresh  
Pin arrangement  
Pin designation  
Pin(s)  
A0 to A11  
RAS  
Description  
SOJ  
TSOP  
Address inputs  
Row address strobe  
Column address strobe  
Write enable  
Input/output  
Output enable  
Power  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
I/O0  
I/O1  
WE  
I/O0  
I/O1  
WE  
CAS  
RAS  
RAS  
*NC/A11  
A9  
*NC/A11  
A9  
WE  
A10  
A8  
A7  
A6  
A5  
A4  
A10  
8
9
10  
11  
12  
13  
A8  
A7  
A6  
A5  
A4  
GND  
I/O0 to I/O3  
OE  
8
9
10  
11  
12  
13  
19  
18  
17  
16  
15  
14  
19  
18  
17  
16  
15  
14  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
VCC  
GND  
GND  
Ground  
*NC on 2K refresh version; A11 on 4K refresh version  
Selection guide  
AS4C4M4F0-50  
AS4C4M4F1-50  
AS4C4M4F0-60  
AS4C4M4F1-60  
Symbol  
Unit  
ns  
Maximum RAS access time  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
50  
25  
12  
13  
85  
25  
135  
1.0  
60  
Maximum column address access time  
Maximum CAS access time  
30  
ns  
15  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
15  
ns  
100  
30  
ns  
tPC  
ns  
ICC1  
ICC5  
120  
1.0  
mA  
mA  
Maximum CMOS standby current  
4/11/01; v.0.9  
Alliance Semiconductor  
P. 1 of 18  
Copyright © Alliance Semiconductor. All rights reserved.  

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