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ALR325

更新时间: 2024-11-04 22:05:39
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

ALR325 技术参数

生命周期:Active零件包装代码:LGA
包装说明:FLANGE MOUNT, R-CDFM-F2针数:2
Reach Compliance Code:unknown风险等级:5.13
最大集电极电流 (IC):18.75 A配置:SINGLE
最小直流电流增益 (hFE):10最高频带:L BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):730 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

ALR325 数据手册

  
ALR325  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .400 2L FLG(A)  
A
4x .062 x 45°  
.040 x 45°  
DESCRIPTION:  
2xB  
C
The ASI ALR325 is Designed for  
F
E
D
G
2xR  
FEATURES:  
H
J
I
K
L
· Input Matching Network  
P
N
·
M
· Omnigold™ Metalization System  
MINIMUM  
inches mm  
MAXIMUM  
inches mm  
DIM  
/
/
.135 / 3.43  
.100 / 2.54  
.050 / 1.27  
.376 / 9.55  
.110 / 2.79  
.395 / 10.03  
.145 / 3.68  
.120 / 3.05  
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS  
.396 / 10.06  
.130 / 3.30  
.407 / 10.34  
18.75 A  
IC  
.193 / 4.90  
.100 / 2.54  
55 V  
VCC  
PDISS  
TJ  
.490 / 12.45  
.510 / 12.95  
730 W @ TC = 25 OC  
-65 OC to +250 OC  
-65 OC to +200 OC  
0.10 OC/W  
.690 / 17.53  
.890 / 22.61  
.003 / 0.08  
.052 / 1.32  
.118 / 3.00  
.710 / 18.03  
.910 / 23.11  
.006 / 0.18  
.072 / 1.83  
.131 / 3.33  
.230 / 5.84  
J
K
L
M
N
P
TSTG  
qJC  
ORDER CODE: ASI10516  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IE = 15 mA  
VCE = 50 V  
VCE = 5.0 V  
65  
V
BVCES  
BVEBO  
ICES  
65  
V
3.0  
V
30  
---  
mA  
---  
hFE  
IC = 5.0 A  
10  
PG  
6.5  
38  
dB  
%
VCC = 45 V  
GHz  
POUT = 325 W  
f = 1.2 to 1.4  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

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