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ALR030

更新时间: 2024-10-29 22:05:39
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

ALR030 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code:unknown风险等级:5.13
最大集电极电流 (IC):2.75 A配置:SINGLE
最小直流电流增益 (hFE):15最高频带:L BAND
JESD-30 代码:R-CDFM-F2元件数量:1
端子数量:2最高工作温度:250 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):63 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

ALR030 数据手册

  
ALR030  
NPN SILICON RF POWER TRANSISTOR  
PACKAGE STYLE .310 2L FLG  
A
.040 x 45°  
4x .062 x 45°  
DESCRIPTION:  
C
2 x B  
Ø E  
D
The ASI ALR030 is Designed for  
F
G
H
I
J
K
FEATURES:  
L
M
· Input Matching Network  
·
R
P
N
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
· Omnigold™ Metalization System  
DIM  
.095 / 2.41  
.100 / 2.54  
.050 / 1.27  
.286 / 7.26  
.110 / 2.79  
.306 / 7.77  
.105 / 2.67  
.120 / 3.05  
A
B
C
D
E
F
G
H
I
MAXIMUM RATINGS  
.306 / 7.77  
.130 / 3.30  
.318 / 8.08  
2.75 A  
IC  
.148 / 3.76  
.400 / 10.16  
.119 / 3.02  
32 V  
VCC  
PDISS  
TJ  
.552 / 14.02  
.790 / 20.07  
.300 / 7.62  
.003 / 0.08  
.052 / 1.32  
.118 / 3.00  
.572 / 14.53  
.810 / 20.57  
.320 / 8.13  
.006 / 0.15  
.072 / 1.83  
.131 / 3.33  
.230 / 5.84  
J
63 W @ TC = 25 OC  
-65 OC to +250 OC  
-65 OC to +200 OC  
2.4 OC/W  
K
L
M
N
P
R
TSTG  
qJC  
ORDER CODE: ASI10512  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 20 mA  
IE = 1 mA  
55  
V
BVCER  
BVEBO  
ICES  
RBE = 10 W  
55  
V
3.5  
V
VE = 28 V  
VCE = 5.0 V  
5
mA  
---  
hFE  
IC = 1.0 A  
15  
150  
PG  
7.0  
45  
dB  
%
VCC = 28 V  
POUT = 30 W  
f = 1.2 to 1.4 GHz  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
Specifications are subject to change without notice.  
REV. A  
1/1  

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