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ALM-1106-TR1 PDF预览

ALM-1106-TR1

更新时间： 2024-11-15 12:28:39
品牌 Logo 应用领域
安华高科 - AVAGO 射频和微波射频放大器微波放大器全球定位系统
页数 文件大小 规格书
10页 177K
描述
GPS Low Noise amplifier with Variable bias current and Shutdown function

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中文翻译

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ALM-1106-TR1 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：SOLCC6,.08,25
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.08
Is Samacsys：N其他特性：CMOS COMPATIBLE
构造：COMPONENT增益：12.7 dB
最大输入功率 (CW)：10 dBmJESD-609代码：e4
安装特点：SURFACE MOUNT功能数量：1
端子数量：6最大工作频率：3500 MHz
最小工作频率：900 MHz封装主体材料：PLASTIC/EPOXY
封装等效代码：SOLCC6,.08,25电源：1/2.85 V
射频/微波设备类型：WIDE BAND MEDIUM POWER子类别：RF/Microwave Amplifiers
最大压摆率：13 mA表面贴装：YES
技术：GAAS端子面层：Nickel/Gold (Ni/Au)
Base Number Matches：1

ALM-1106-TR1 数据手册

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ALM-1106  
GPS Low Noise amplifier with Variable bias current and  
Shutdown function  
Data Sheet  
Description  
Features  
Avago Technologies’s ALM-1106 is a LNA  
designed for GPS/ISM/Wimax applications in  
the (0.9-3.5)GHz frequency range. The LNA  
uses Agilent Technologies’s proprietary GaAs  
Enhancement-mode pHEMT process to achieve  
high gain operation with very low noise figures  
and high linearity. Noise figure distribution is  
very tightly controlled. Gain and supply current  
are guaranteed parameters. A CMOS compatible  
shutdown pin is included to turn the LNA off  
and provide a variable bias.  
• Advanced GaAs E-pHEMT  
• Low Noise: 0.8 dB typ  
• High Gain : 14.3 dB typ  
• Low component count  
• High IIP3 and IP1dB  
• Wide Supply Voltage: 1V to 3.6V  
• Shutdown current : < 0.1uA  
• CMOS compatible shutdown pin (VSD) current @ 2.85V  
: 90uA  
The ALM-1106 LNA is useable down to 1V  
operation. It achieves low noise figures and  
high gain even at 1V, making it suitable for  
use in critical low power GPS/ISM band  
applications.  
• Adjustable bias current via one single external  
resistor/voltage  
2
• Small Footprint: 2x2mm  
• Low Profile: 1.1mm typ  
• Ext matching for non-GPS freq band operation  
Simplified Schmatic  
VSD  
VDD  
Specifications (25 deg): At 1.575GHz, 2.85V 8mA (Typ)  
• Gain = 14.3 dB (Typ)  
• NF = 0.8 dB (Typ)  
BIAS  
• IIP3 = 4.7 dBm (Typ)  
• IP1dB = 1.8 dBm (Typ)  
• S11 = -11.8 dB (Typ)  
• S22 = -12.4 dB (Typ)  
RF_IN  
C
RF_OUT  
C
C2  
C1  
Amplifier2  
AMP1  
Surface Mount  
2.0 x 2.0 x 1.1 mm  
Pin Configuration  
3
Pin 6  
Pin 1  
Pin 2  
Pin 3  
Typical performance @ 1.0V supply  
S21 = 12.3dB  
O
Pin 5  
Pin 4  
GND  
AY  
WW  
NF = 1.0dB  
Ids = 3.6mA  
Note:  
Bottom View  
Measurements obtained using demoboard described in Figure 4.  
Note:  
LNA I/O’s :  
Package marking  
provides Orientation  
and identification  
“A” = Product Code  
“Y” = Year  
1. NC  
2. RF_IN  
3. NC  
4. VSD  
5. RF_OUT  
6. VDD  
BOTTOM PADDLE : GND  
“WW” = Work Week  
1234567...10

中文翻译

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