TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD110802/ALD110902
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®
PRECISION MATCHED PAIR MOSFET ARRAY
V
= +0.20V
GS(th)
GENERAL DESCRIPTION
APPLICATIONS
ALD110802/ALD110902 are high precision monolithic quad/dual enhance-
ment mode N-Channel MOSFETS matched at the factory using ALD’s
proven EPAD CMOS technology. These devices are intended for low volt-
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.20V) circuits
• Sub-threshold biased and operated circuits
• Precision current mirrors and current sources
• Nano-Amp current sources
• High impedance resistor simulators
• Capacitive probes and sensor interfaces
• Differential amplifier input stages
• Discrete Voltage comparators and level shifters
• Voltage bias circuits
®
age, small signal applications. TheALD110802/ALD110902 MOSFETS are
designed and built for exceptional device electrical characteristics match-
ing. Since these devices are on the same monolithic chip, they also exhibit
excellent tempco tracking characteristics. They are versatile circuit elements
useful as design components for a broad range of analog applications,
such as basic building blocks for current sources, differential amplifier input
stages, transmission gates, and multiplexer applications. For most applica-
tions, connect the V+ pin to the most positive voltage and the V- and IC
pins to the most negative voltage in the system. All other pins must have
voltages within these voltage limits at all times.
• Sample and Hold circuits
• Analog and digital inverters
• Charge detectors and charge integrators
• Source followers and High Impedance buffers
• Current multipliers
The ALD110802/ALD110902 devices are built for minimum offset voltage
and differential thermal response, and they are suited for switching and
amplifying applications in <+0.1V to +10V systems where low input bias
current, low input capacitance and fast switching speed are desired, as
these devices exhibit well controlled turn-off and sub-threshold character-
istics and can be biased and operated in the sub-threshold region. Since
these are MOSFET devices, they feature very large (almost infinite) cur-
rent gain in a low frequency, or near DC, operating environment.
• Discrete Analog switches / multiplexers
PIN CONFIGURATION
ALD110802
TheALD110802/ALD110902 are suitable for use in very low operating volt-
age or very low power (nanowatt), precision applications which require very
high current gain, beta, such as current mirrors and current sources. The
high input impedance and the high DC current gain of the Field Effect Tran-
sistors result from extremely low current loss through the control gate. The
DC current gain is limited by the gate input leakage current, which is speci-
fied at 30pA at room temperature. For example, DC beta of the device at a
drain current of 3mA, input leakage current of 30pA, and 25°C is
3mA/30pA = 100,000,000.
-
-
V
V
1
2
3
4
5
6
7
8
IC*
G
16
15
14
13
12
11
10
9
IC*
G
N2
N1
M 2
M 1
D
V
S
D
S
N2
N1
+
+
V
12
-
-
V
V
34
D
D
N4
FEATURES
N3
M 4
M 3
G
N4
G
N3
• Enhancement-mode (normally off)
• Precision Gate Threshold Voltage of +0.20V
• Matched MOSFET-to-MOSFET characteristics
• Tight lot-to-lot parametric control
IC*
IC*
-
-
V
V
SCL, PCL PACKAGES
• Low input capacitance
• V
match (V ) to 10mV
GS(th)
OS
• High input impedance — 1012Ω typical
ALD110902
-
• Positive, zero, and negative V
temperature coefficient
GS(th)
• DC current gain >108
-
V
V
• Low input and output leakage currents
1
2
3
4
8
7
6
5
IC*
G
IC*
G
N2
N1
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
M 1
M 2
D
S
D
N1
N2
Operating Temperature Range*
0°C to +70°C
-
-
V
V
0°C to +70°C
12
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
SAL, PAL PACKAGES
*IC pins are internally connected.
Connect to V-
ALD110802SCL ALD110802PCL ALD110902SAL ALD110902PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
©2016 Advanced Linear Devices, Inc., Vers. 2.3
www.aldinc.com
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