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ALD110802 PDF预览

ALD110802

更新时间: 2024-01-05 01:48:46
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页数 文件大小 规格书
2页 38K
描述
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD MATCHED PAIR MOSFET ARRAY

ALD110802 技术参数

是否无铅: 含铅生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.58Is Samacsys:N
Base Number Matches:1

ALD110802 数据手册

 浏览型号ALD110802的Datasheet PDF文件第2页 
TM  
ADVANCED  
LINEAR  
®
e
EPAD  
A
DEVICES, INC.  
ALD110802/ALD110902  
QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®  
V
= +0.2V  
GS(th)  
MATCHED PAIR MOSFET ARRAY  
APPLICATIONS  
GENERAL DESCRIPTION  
• Ultra low power (nanowatt) analog and digital  
circuits  
• Ultra low operating voltage(<0.2V) circuits  
• Sub-threshold biased and operated circuits  
• Precision current mirrors and current sources  
• Nano-Amp current sources  
• High impedance resistor simulators  
• Capacitive probes and sensor interfaces  
• Differential amplifier input stages  
• Discrete Voltage comparators and level shifters  
• Voltage bias circuits  
ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS  
matched at the factory using ALD’s proven EPAD® CMOS technology.  
These devices are intended for low voltage, small signal applications.  
The ALD110802/ALD110902 MOSFETS are designed and built for ex-  
ceptional device electrical characteristics matching. Since these devices  
are on the same monolithic chip, they also exhibit excellent tempco tracking  
characteristics. They are versatile circuit elements useful as design com-  
ponents for a broad range of analog applications, such as basic building  
blocks for current sources, differential amplifier input stages, transmis-  
sion gates, and multiplexer applications. For most applications, connect  
-
V and N/C pins to the most negative voltage potential in the system and  
+
V
• Sample and Hold circuits  
• Analog and digital inverters  
pin to the most positive voltage potential (or left open unused). All  
other pins must have voltages within these voltage limits.  
• Charge detectors and charge integrators  
• Source followers and High Impedance buffers  
• Current multipliers  
TheALD110802/ALD110902 devices are built for minimum offset voltage  
and differential thermal response, and they are suited for switching and  
amplifying applications in <+0.1V to +10V systems where low input bias  
current, low input capacitance and fast switching speed are desired, as  
these devices exhibit well controlled turn-off and sub-threshold charac-  
teristics and can be biased and operated in the sub-threshold region.  
Since these are MOSFET devices, they feature very large (almost infi-  
nite) current gain in a low frequency, or near DC, operating environment.  
• Discrete Analog switches / multiplexers  
PIN CONFIGURATION  
ALD110802  
The ALD110802/ALD110902 are suitable for use in very low operating  
voltage or very low power (nanowatt), precision applications which re-  
quire very high current gain, beta, such as current mirrors and current  
sources. The high input impedance and the high DC current gain of the  
Field Effect Transistors result from extremely low current loss through  
the control gate. The DC current gain is limited by the gate input leakage  
current, which is specified at 30pA at room temperature. For example,  
DC beta of the device at a drain current of 3mA and input leakage current  
of 30pA at 25°C is = 3mA/30pA = 100,000,000.  
-
-
V
V
1
2
3
4
5
6
7
8
N/C*  
16  
15  
14  
13  
12  
11  
10  
9
N/C*  
G
G
N2  
N1  
M 2  
M 1  
D
D
N1  
N2  
+
+
V
V
S
12  
-
-
V
S
V
34  
D
D
FEATURES  
N3  
N4  
N4  
M 4  
M 3  
G
G
N3  
• Enhancement-mode (normally off)  
• Precision Gate Threshold Voltage of +0.2V  
• Matched MOSFET to MOSFET characteristics  
• Tight lot to lot parametric control  
N/C*  
N/C*  
-
-
V
V
PC, SC PACKAGES  
ALD110902  
• Low input capacitance  
• V  
match (V ) to 10mV  
GS(th)  
OS  
• High input impedance — 1012typical  
• Positive, zero, and negative V  
• DC current gain >108  
• Low input and output leakage currents  
temperature coefficient  
GS(th)  
-
-
V
V
1
2
3
4
8
7
6
5
N/C*  
N/C*  
G
N2  
G
N1  
ORDERING INFORMATION  
M 1  
M 2  
D
N1  
D
N2  
Operating Temperature Range*  
0°C to +70°C 0°C to +70°C  
-
-
S
12  
V
V
16-Pin  
Plastic Dip  
Package  
16-Pin  
SOIC  
Package  
8-Pin  
Plastic Dip  
Package  
8Pin  
SOIC  
Package  
PA, SA PACKAGES  
*N/C pins are internally connected.  
Connect to V- to reduce noise  
ALD110802PC ALD110802SC ALD110902PA ALD110902SA  
* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.  
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286  
www.aldinc.com  

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