TM
A
L
D
DVANCED
INEAR
EVICES, INC.
®
e
EPAD
A
ALD110800/ALD110800A/ALD110900/ALD110900A
QUAD/DUAL N-CHANNEL ZERO THRESHOLD™ EPAD®
V
= +0.00V
GS(th)
PRECISION MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
FEATURES
ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision
monolithic quad/dual N-Channel MOSFETs matched at the factory using
ALD’s proven EPAD CMOS technology. These devices are members of
• Precision zero threshold voltage mode
• Nominal R @V =0.00V of 104KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
DS(ON)
GS
®
the EPAD Matched Pair MOSFET Family.
• V
match (V ) to 2mV and 10mV max.
GS(th)
OS
Intended for low voltage small signal applications, the ALD110800/
ALD110900 features Zero-Threshold™voltage, which reduces or elimi-
nates input to output voltage level shift, including circuits where the signal
is referenced to GND or V+. This feature greatly reduces output signal
voltage level shift and enhances signal operating range, especially for
very low operating voltage environments. With these zero threshold de-
vices, an analog circuit with multiple stages can be constructed to oper-
ate at extremely low supply or bias voltage levels. For example, an input
amplifier stage operating at 0.2V supply voltage has been demonstrated.
• Positive, zero, and negative V
• Low input capacitance
• Low input/output leakage currents
APPLICATIONS
tempco
GS(th)
• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Zero power fail safe circuits
• Backup battery circuits & power failure detector
• Low level voltage clamp & zero crossing detector
• Source followers and buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
ALD110800A/ALD110800/ALD110900A/ALD110900 matched pair
MOSFETs are designed for exceptional device electrical characteristics
matching with the threshold voltage set precisely at +0.00V +0.01V, fea-
turing a typical offset voltage of only +0.001V (1mV). As these devices
are on the same monolithic chip, they also exhibit excellent tempco track-
ing characteristics. They are versatile as design components for a broad
range of analog applications such as basic building blocks for current
sources, differential amplifier input stages, transmission gates, and multi-
plexer applications.
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Analog switches / multiplexers
• Voltage comparators and level shifters
Besides matched pair electrical characteristics, each individual MOSFET
also exhibits well controlled parameters, enabling the user to depend on
tight design limits. Even units from different batches and different date
of manufacture have correspondingly well matched characteristics.
PIN CONFIGURATIONS
ALD110800
These devices are built for minimum offset voltage and differential ther-
mal response, and they are designed for switching and amplifying appli-
cations in +0.2V to +10V systems where low input bias current, low input
-
-
V
V
1
2
3
4
5
6
7
8
IC*
G
16
15
14
13
12
11
10
9
IC*
G
capacitance, and fast switching speed are desired. The V
of these
GS(th)
N2
N1
devices is set at +0.00V, which classifies them as both enhancement mode
and depletion mode devices. When the gate is set at 0.00V, the drain
M 2
M 1
D
V
S
D
S
N2
N1
current is +1µA @ V = 0.1V, which allows a class of circuits with output
DS
+
+
V
voltage level biased at or near input voltage level without voltage level
shift. These devices exhibit well controlled turn-off and sub-threshold
characteristics of standard enhancement mode MOSFETs.
12
-
-
V
V
34
D
D
N4
N3
M 4
M 3
The ALD110800A/ALD110800/ALD110900A/ALD110900 are MOSFET
devices that feature high input impedance (1012Ω) and high DC current
gain (>108). A sample calculation of the DC current gain at a drain current
of 3mA and input leakage current of 30pA at 25°C is 3mA/30pA =
100,000,000. For most applications, connect the V+ pin to the most posi-
tive voltage and the V- and IC pins to the most negative voltage in the
system. All other pins must have voltages within these voltage limits at all
times.
G
N4
G
N3
IC*
IC*
-
-
V
V
SCL, PCL PACKAGES
ALD110900
-
-
V
V
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
1
2
3
4
8
7
6
5
IC*
G
IC*
G
Operating Temperature Range*
N2
N1
0°C to +70°C
0°C to +70°C
M 1
M 2
D
S
D
V
N1
N2
16-Pin
SOIC
Package
16-Pin
Plastic Dip
Package
8-Pin
SOIC
Package
8-Pin
Plastic Dip
Package
-
-
V
12
ALD110800ASCL ALD110800APCL ALD110900ASAL ALD110900APAL
ALD110800SCL ALD110800PCL ALD110900SAL ALD110900PAL
* Contact factory for industrial temp. range or user-specified threshold voltage values.
SAL, PAL PACKAGES
*IC pins are internally connected, connect to V-
Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
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