Datasheet > ALD1105DB

ALD1105DB

更新时间： 2024-11-24 08:24:23

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
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描述
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET

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ALD1105DB 技术参数

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ALD1105DB 数据手册

ADVANCED

INEAR

ALD1105

EVICES, INC.

DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET

APPLICATIONS

GENERAL DESCRIPTION

The ALD1105 is a monolithic dual N-channel and dual P-channel

complementary matched transistor pair intended for a broad range of

analog applications. These enhancement-mode transistors are

manufactured with Advanced Linear Devices' enhanced ACMOS silicon

gate CMOS process. It consists of an ALD1116 N-channel MOSFET pair

and an ALD1117 P-channel MOSFET pair in one package. The ALD1105

is a low drain current, low leakage current version of the ALD1103.

• Precision current mirrors

• Complementary push-pull linear drives

• Discrete Analog switches

• Analog signal Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog current inverter

• Precision matched current sources

TheALD1105offershighinputimpedanceandnegativecurrenttemperature

coefficient. The transistor pair is matched for minimum offset voltage and

differential thermal response, and it is designed for precision signal

switching and amplifying applications in +1V to +12V systems where low

input bias current, low input capacitance and fast switching speed are

desired. SincetheseareMOSFETdevices, theyfeatureverylarge(almost

infinite)currentgaininalowfrequency,ornearDC,operatingenvironment.

When used in complementary pairs, a dual CMOS analog switch can be

constructed. In addition, the ALD1105 is intended as a building block for

differential amplifier input stages, transmission gates, and multiplexer

applications.

PIN CONFIGURATION

DN1

GN1

SN1

DN2

GN2

12 SN2

The ALD1105 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the field effect

transistorsresultinextremelylowcurrentlossthroughthecontrolgate.The

DC current gain is limited by the gate input leakage current, which is

specifiedat30pAatroomtemperature. Forexample, DCbetaofthedevice

at a drain current of 3mA at 25°C is = 3mA/30pA = 100,000,000.

DP1

GP1

SP1

DP2

GP2

SP2

DB, PB, SB PACKAGE

FEATURES

• Thermal tracking between N-channel and P-channel pairs

• Low threshold voltage of 0.7V for both N-channel &

P-channel MOSFETs

BLOCK DIAGRAM

N GATE 1 (2)

• Low input capacitance

• Low Vos -- 10mV

• High input impedance -- 10¹³Ω typical

• Low input and output leakage currents

N SOURCE 1 (3)

SUBSTRATE (4)

N DRAIN 1 (1)

N DRAIN 2 (14)

• Negative current (I ) temperature coefficient

N SOURCE 2 (12)

• Enhancement mode (normally off)

• DC current gain 10⁹

• Matched N-channel pair and matched P-channel pair in one package

N GATE 2 (13)

P GATE 1 (6)

ORDERING INFORMATION

Operating Temperature Range*

-55°C to +125°C

0°C to +70°C

P SOURCE 1 (7)

SUBSTRATE (11)

P DRAIN 1 (5)

P DRAIN 2 (10)

14-Pin

CERDIP

Package

14-Pin

Plastic Dip

Package

14-Pin

SOIC

Package

P SOURCE 2 (8)

ALD1105 DB

ALD1105 PB

ALD1105 SB

P GATE 2 (9)

* Contact factory for industrial temperature range.

12 3 4 5 6

中文翻译

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与ALD1105DB相关器件

型号	品牌	获取价格	描述	数据表
ALD1105PB	ALD	获取价格	DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL	ALD	获取价格	DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105SB	ALD	获取价格	DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105SBL	ALD	获取价格	DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1106	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1106_12	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1106DB	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1106PB	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY
ALD1106PBL	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
ALD1106SB	ALD	获取价格	QUAD/DUAL N-CHANNEL MATCHED MOSFET ARRAY

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