5秒后页面跳转
捷配首页

Datasheet > ALD1103DB
ALD1103DB PDF预览

ALD1103DB

更新时间： 2024-11-07 22:05:39
品牌 Logo 应用领域
先进线性 - ALD 晶体晶体管开关输入元件
页数 文件大小 规格书
6页 72K
描述
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR

阅读下载

中文翻译

获取价格

ALD1103DB 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Contact Manufacturer零件包装代码：DIP
包装说明：IN-LINE, R-GDIP-T14针数：14
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.27
Is Samacsys：N其他特性：LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置：2 BANKS, COMMON SUBSTRATE, 2 ELEMENTS最小漏源击穿电压：12 V
最大漏源导通电阻：75 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-GDIP-T14JESD-609代码：e0
元件数量：4端子数量：14
工作模式：ENHANCEMENT MODE最高工作温度：125 °C
封装主体材料：CERAMIC, GLASS-SEALED封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL AND P-CHANNEL最大功率耗散 (Abs)：0.5 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

ALD1103DB 数据手册

 浏览型号ALD1103DB的Datasheet PDF文件第2页浏览型号ALD1103DB的Datasheet PDF文件第3页浏览型号ALD1103DB的Datasheet PDF文件第4页浏览型号ALD1103DB的Datasheet PDF文件第5页浏览型号ALD1103DB的Datasheet PDF文件第6页 
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
ALD1103  
DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR  
GENERAL DESCRIPTION  
APPLICATIONS  
The ALD1103 is a monolithic dual N-channel and dual P-channel matched  
transistor pair intended for a broad range of analog applications. These  
enhancement-mode transistors are manufactured with Advanced Linear  
Devices' enhanced ACMOS silicon gate CMOS process. It consists of an  
ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET  
pair in one package.  
• Precision current mirrors  
• Complementary push-pull linear drives  
• Analog switches  
• Choppers  
• Differential amplifier input stage  
• Voltage comparator  
• Data converters  
• Sample and Hold  
• Analog inverter  
• Precision matched current sources  
TheALD1103offershighinputimpedanceandnegativecurrenttemperature  
coefficient. The transistor pair is matched for minimum offset voltage and  
differential thermal response, and it is designed for precision signal  
switching and amplifying applications in +2V to +12V systems where low  
input bias current, low input capacitance and fast switching speed are  
desired. SincetheseareMOSFETdevices, theyfeatureverylarge(almost  
infinite)currentgaininalowfrequency,ornearDC,operatingenvironment.  
When used in pairs, a dual CMOS analog switch can be constructed. In  
addition, the ALD1103 is intended as a building block for differential  
amplifier input stages, transmission gates, and multiplexer applications.  
PIN CONFIGURATION  
DN1  
GN1  
SN1  
1
2
3
4
5
6
14  
13  
DN2  
GN2  
12 SN2  
+
The ALD1103 is suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result in extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specifiedat50pAatroomtemperature. Forexample, DCbetaofthedevice  
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.  
-
V
11  
10  
9
V
DP1  
GP1  
SP1  
DP2  
GP2  
8
SP2  
7
FEATURES  
DB, PB, SB PACKAGE  
• Thermal tracking between N-channel and P-channel pairs  
• Low threshold voltage of 0.7V for both N-channel &  
P-channel MOSFETS  
BLOCK DIAGRAM  
• Low input capacitance  
N GATE 1 (2)  
• Low Vos -- 10mV  
• High input impedance -- 1013Ω typical  
• Low input and output leakage currents  
N SOURCE 1 (3)  
SUBSTRATE (4)  
N DRAIN 1 (1)  
N DRAIN 2 (14)  
• Negative current (I ) temperature coefficient  
DS  
• Enhancement mode (normally off)  
• DC current gain 109  
N SOURCE 2 (12)  
• Matched N-channel and matched P-channel in one package  
N GATE 2 (13)  
P GATE 1 (6)  
ORDERING INFORMATION  
Operating Temperature Range*  
-55°C to +125°C  
0°C to +70°C  
0°C to +70°C  
P SOURCE 1 (7)  
SUBSTRATE (11)  
P DRAIN 1 (5)  
P DRAIN 2 (10)  
14-Pin  
CERDIP  
Package  
14-Pin  
Plastic Dip  
Package  
14-Pin  
SOIC  
Package  
P SOURCE 2 (8)  
ALD1103 DB  
ALD1103 PB  
ALD1103 SB  
P GATE 2 (9)  
* Contact factory for industrial temperature range.  
© 1998 Advanced Linear Devices, Inc. 415Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  
123456

中文翻译

下载PDF

与ALD1103DB相关器件

型号 品牌 获取价格 描述 数据表
ALD1103PB ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103PBL ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103SB ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1103SBL ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105 ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105_12 ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105DB ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PB ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET
ALD1105PBL ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR
ALD1105SB ALD

获取价格

 		DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED PAIR MOSFET

与ALD1103DB相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证