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ALD1102BPA PDF预览

ALD1102BPA

更新时间: 2024-11-07 22:05:39
品牌 Logo 应用领域
先进线性 - ALD 晶体晶体管开关光电二极管输入元件
页数 文件大小 规格书
4页 31K
描述
DUAL P-CHANNEL MATCHED MOSFET PAIR

ALD1102BPA 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Contact Manufacturer零件包装代码:DIP
包装说明:IN-LINE, R-PDIP-T8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.25
Is Samacsys:N其他特性:LOW THRESHOLD, HIGH INPUT IMPEDANCE
配置:COMMON SUBSTRATE, 2 ELEMENTS最小漏源击穿电压:12 V
最大漏源导通电阻:270 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:70 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ALD1102BPA 数据手册

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A
L
D
DVANCED  
INEAR  
EVICES, INC.  
ALD1102A/ALD1102B  
ALD1102  
DUAL P-CHANNEL MATCHED MOSFET PAIR  
© 1998Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  
GENERAL DESCRIPTION  
APPLICATIONS  
The ALD1102 is a monolithic dual P-channel matched transistor pair  
intended for a broad range of analog applications. These enhancement-  
mode transistors are manufactured with Advanced Linear Devices' en-  
hanced ACMOS silicon gate CMOS process.  
• Precision current mirrors  
• Precision current sources  
• Analog switches  
• Choppers  
• Differential amplifier  
input stage  
• Voltage comparator  
• Data converters  
• Sample and Hold  
• Analog inverter  
The ALD1102 offers high input impedance and negative current tempera-  
ture coefficient. The transistor pair is matched for minimum offset voltage  
and differential thermal response, and it is designed for switching and  
amplifying applications in +2V to +12V systems where low input bias  
current, low input capacitance and fast switching speed are desired. Since  
theseareMOSFETdevices,theyfeatureverylarge(almostinfinite)current  
gain in a low frequency, or near DC operating environment. When used  
with an ALD1101, a dual CMOS analog switch can be constructed. In  
addition, the ALD1102 is intended as a building block for differential  
amplifier input stages, transmission gates, and multiplexer applications.  
PIN CONFIGURATION  
The ALD1102 is suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result in extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specifiedat50pAatroomtemperature. Forexample, DCbetaofthedevice  
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.  
1
8
SUBSTRATE  
SOURCE  
SOURCE  
GATE  
1
1
1
2
3
7
6
2
DRAIN  
GATE  
2
4
DRAIN  
2
NC  
5
TOP VIEW  
DA, PA, SA PACKAGE  
FEATURES  
• Low threshold voltage of 0.7V  
• Low input capacitance  
• Low Vos grades -- 2mV, 5mV, 10mV  
• High input impedance -- 1012typical  
• Low input and output leakage currents  
• Negative current (I ) temperature coefficient  
DS  
• Enhancement-mode (normally off)  
• DC current gain 109  
BLOCK DIAGRAM  
GATE 1 (2)  
ORDERING INFORMATION  
Operating Temperature Range*  
SOURCE 1 (1)  
DRAIN 1 (3)  
DRAIN 2 (5)  
-55°C to +125°C  
0°C to +70°C  
0°C to +70°C  
SUBSTRATE (8)  
8-Pin  
CERDIP  
Package  
8-Pin  
Plastic Dip  
Package  
8-Pin  
SOIC  
Package  
SOURCE 2 (7)  
GATE 2 (6)  
ALD1102A PA  
ALD1102B PA  
ALD1102 PA  
ALD1102 DA  
ALD1102 SA  
* Contact factory for industrial temperature range.  
© 1998 Advanced Linear Devices, Inc. 415Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  

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