Datasheet > ALD1101BSAL

ALD1101BSAL

更新时间： 2024-01-22 14:22:17

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
6页	60K
描述
DUAL N-CHANNEL MATCHED MOSFET PAIR

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ALD1101BSAL 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	70 °C
极性/信道类型：	N-CHANNEL	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

ALD1101BSAL 数据手册

DVANCED

INEAR

EVICES, INC.

ALD1101A/ALD1101B

ALD1101

DUAL N-CHANNEL MATCHED MOSFET PAIR

GENERAL DESCRIPTION

APPLICATIONS

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, lowinputcapacitanceandfastswitchingspeedaredesired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

PIN CONFIGURATION

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specifiedat50pAatroomtemperature. Forexample,DCbetaofthedevice

at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

SUBSTRATE

SOURCE

GATE

DRAIN

GATE

DRAIN

TOP VIEW

SAL, PAL, DA PACKAGES

FEATURES

* NC pin is internally connected. Do not connect externally.

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10¹²Ω typical

• Negative current (I ) temperature coefficient

• Enhancement-mode (normally off)

• DC current gain 10⁹

• RoHS compliant

BLOCK DIAGRAM

GATE 1 (2)

ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))

Operating Temperature Range

SOURCE 1 (1)

DRAIN 1 (3)

DRAIN 2 (5)

0°C to +70°C

-55°C to +125°C

SUBSTRATE (8)

8-Pin

CERDIP

Package

SOURCE 2 (7)

Small Outline

Package (SOIC)

Plastic Dip

Package

ALD1101ASAL

ALD1101BSAL

ALD1101SAL

ALD1101APAL

ALD1101BPAL

ALD1101PAL

GATE 2 (6)

ALD1101DA

* Contact factory for leaded (non-RoHS) or high temperature versions.

www.aldinc.com

12 3 4 5 6

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与ALD1101BSAL相关器件

型号	品牌	描述	获取价格	数据表
ALD1101DA	ALD	DUAL N-CHANNEL MATCHED MOSFET PAIR	获取价格
ALD1101MA	ETC	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 13.2V V(BR)DSS \| TO-99	获取价格
ALD1101PA	ALD	DUAL N-CHANNEL MATCHED MOSFET PAIR	获取价格
ALD1101PAL	ALD	DUAL N-CHANNEL MATCHED MOSFET PAIR	获取价格
ALD1101SA	ALD	DUAL N-CHANNEL MATCHED MOSFET PAIR	获取价格
ALD1101SAL	ALD	DUAL N-CHANNEL MATCHED MOSFET PAIR	获取价格

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