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ALD1101APA

更新时间： 2024-09-19 22:05:39
品牌 Logo 应用领域
先进线性 - ALD 晶体晶体管开关光电二极管输入元件
页数 文件大小 规格书
4页 34K
描述
DUAL N-CHANNEL MATCHED MOSFET PAIR

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ALD1101APA 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Contact Manufacturer零件包装代码：DIP
包装说明：IN-LINE, R-PDIP-T8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.24
其他特性：LOW THRESHOLD, HIGH INPUT IMPEDANCE配置：COMMON SUBSTRATE, 2 ELEMENTS
最小漏源击穿电压：12 V最大漏源导通电阻：75 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDIP-T8
JESD-609代码：e0元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：70 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

ALD1101APA 数据手册

 浏览型号ALD1101APA的Datasheet PDF文件第2页浏览型号ALD1101APA的Datasheet PDF文件第3页浏览型号ALD1101APA的Datasheet PDF文件第4页 
A
L
D
DVANCED  
INEAR  
EVICES, INC.  
ALD1101A/ALD1101B  
ALD1101  
DUAL N-CHANNEL MATCHED MOSFET PAIR  
© 1998Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  
GENERAL DESCRIPTION  
APPLICATIONS  
The ALD1101 is a monolithic dual N-channel matched transistor pair  
intended for a broad range of analog applications. These enhancement-  
mode transistors are manufactured with Advanced Linear Devices' en-  
hanced ACMOS silicon gate CMOS process.  
• Precision current mirrors  
• Precision current sources  
• Analog switches  
• Choppers  
• Differential amplifier  
input stage  
• Voltage comparator  
• Data converters  
• Sample and Hold  
• Analog inverter  
The ALD1101 offers high input impedance and negative current tempera-  
ture coefficient. The transistor pair is matched for minimum offset voltage  
and differential thermal response, and it is designed for switching and  
amplifying applications in +2V to +12V systems where low input bias  
current, lowinputcapacitanceandfastswitchingspeedaredesired. Since  
these are MOSFET devices, they feature very large (almost infinite)  
current gain in a low frequency, or near DC, operating environment. When  
used with an ALD1102, a dual CMOS analog switch can be constructed.  
In addition, the ALD1101 is intended as a building block for differential  
amplifier input stages, transmission gates, and multiplexer applications.  
PIN CONFIGURATION  
The ALD1101 is suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result in extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specifiedat50pAatroomtemperature. Forexample, DCbetaofthedevice  
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.  
1
8
SUBSTRATE  
SOURCE  
SOURCE  
1
GATE  
2
3
7
6
1
1
2
DRAIN  
GATE  
2
4
DRAIN  
2
NC  
5
TOP VIEW  
DA, PA, SA PACKAGE  
FEATURES  
• Low threshold voltage of 0.7V  
• Low input capacitance  
• Low Vos grades -- 2mV, 5mV, 10mV  
• High input impedance -- 1012Ω typical  
• Negative current (I ) temperature  
DS  
coefficient  
• Enhancement-mode (normally off)  
BLOCK DIAGRAM  
• DC current gain 109  
GATE 1 (2)  
ORDERING INFORMATION  
Operating Temperature Range*  
SOURCE 1 (1)  
DRAIN 1 (3)  
DRAIN 2 (5)  
-55°C to +125°C  
0°C to +70°C  
0°C to +70°C  
SUBSTRATE (8)  
SOURCE 2 (7)  
8-Pin  
CERDIP  
8-Pin  
Plastic Dip  
8-Pin  
SOIC  
Package  
Package  
Package  
ALD1101A PA  
ALD1101B PA  
ALD1101 PA  
GATE 2 (6)  
ALD1101 DA  
ALD1101 SA  
* Contact factory for industrial temperature range.  
© 1998 Advanced Linear Devices, Inc. 415Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  
1234

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