Datasheet > ALD1101A

ALD1101A

更新时间： 2024-09-19 22:05:39

品牌	Logo	应用领域
先进线性 - ALD		/
页数	文件大小	规格书
4页	34K
描述
DUAL N-CHANNEL MATCHED MOSFET PAIR

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ALD1101A 数据手册

DVANCED

INEAR

EVICES, INC.

ALD1101A/ALD1101B

ALD1101

DUAL N-CHANNEL MATCHED MOSFET PAIR

GENERAL DESCRIPTION

APPLICATIONS

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier

input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, lowinputcapacitanceandfastswitchingspeedaredesired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

PIN CONFIGURATION

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specifiedat50pAatroomtemperature. Forexample, DCbetaofthedevice

at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.

SUBSTRATE

SOURCE

GATE

DRAIN

GATE

DRAIN

TOP VIEW

DA, PA, SA PACKAGE

FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10¹²Ω typical

• Negative current (I ) temperature

coefficient

• Enhancement-mode (normally off)

BLOCK DIAGRAM

• DC current gain 10⁹

GATE 1 (2)

ORDERING INFORMATION

Operating Temperature Range*

SOURCE 1 (1)

DRAIN 1 (3)

DRAIN 2 (5)

-55°C to +125°C

0°C to +70°C

SUBSTRATE (8)

SOURCE 2 (7)

8-Pin

CERDIP

8-Pin

Plastic Dip

8-Pin

SOIC

Package

ALD1101A PA

ALD1101B PA

ALD1101 PA

GATE 2 (6)

ALD1101 DA

ALD1101 SA

* Contact factory for industrial temperature range.

12 3 4

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与ALD1101A相关器件

型号	品牌	获取价格	描述	数据表
ALD1101A_12	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101APA	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101APAL	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101ASAL	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101B	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101BPA	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101BPAL	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101BSAL	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101DA	ALD	获取价格	DUAL N-CHANNEL MATCHED MOSFET PAIR
ALD1101MA	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 13.2V V(BR)DSS \| TO-99

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