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ALD1101 PDF预览

ALD1101

更新时间: 2024-11-23 22:05:39
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先进线性 - ALD /
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4页 34K
描述
DUAL N-CHANNEL MATCHED MOSFET PAIR

ALD1101 数据手册

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A
L
D
DVANCED  
INEAR  
EVICES, INC.  
ALD1101A/ALD1101B  
ALD1101  
DUAL N-CHANNEL MATCHED MOSFET PAIR  
© 1998Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  
GENERAL DESCRIPTION  
APPLICATIONS  
The ALD1101 is a monolithic dual N-channel matched transistor pair  
intended for a broad range of analog applications. These enhancement-  
mode transistors are manufactured with Advanced Linear Devices' en-  
hanced ACMOS silicon gate CMOS process.  
• Precision current mirrors  
• Precision current sources  
• Analog switches  
• Choppers  
• Differential amplifier  
input stage  
• Voltage comparator  
• Data converters  
• Sample and Hold  
• Analog inverter  
The ALD1101 offers high input impedance and negative current tempera-  
ture coefficient. The transistor pair is matched for minimum offset voltage  
and differential thermal response, and it is designed for switching and  
amplifying applications in +2V to +12V systems where low input bias  
current, lowinputcapacitanceandfastswitchingspeedaredesired. Since  
these are MOSFET devices, they feature very large (almost infinite)  
current gain in a low frequency, or near DC, operating environment. When  
used with an ALD1102, a dual CMOS analog switch can be constructed.  
In addition, the ALD1101 is intended as a building block for differential  
amplifier input stages, transmission gates, and multiplexer applications.  
PIN CONFIGURATION  
The ALD1101 is suitable for use in precision applications which require  
very high current gain, beta, such as current mirrors and current sources.  
The high input impedance and the high DC current gain of the Field Effect  
Transistors result in extremely low current loss through the control gate.  
The DC current gain is limited by the gate input leakage current, which is  
specifiedat50pAatroomtemperature. Forexample, DCbetaofthedevice  
at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.  
1
8
SUBSTRATE  
SOURCE  
SOURCE  
1
GATE  
2
3
7
6
1
1
2
DRAIN  
GATE  
2
4
DRAIN  
2
NC  
5
TOP VIEW  
DA, PA, SA PACKAGE  
FEATURES  
• Low threshold voltage of 0.7V  
• Low input capacitance  
• Low Vos grades -- 2mV, 5mV, 10mV  
• High input impedance -- 1012typical  
• Negative current (I ) temperature  
DS  
coefficient  
• Enhancement-mode (normally off)  
BLOCK DIAGRAM  
• DC current gain 109  
GATE 1 (2)  
ORDERING INFORMATION  
Operating Temperature Range*  
SOURCE 1 (1)  
DRAIN 1 (3)  
DRAIN 2 (5)  
-55°C to +125°C  
0°C to +70°C  
0°C to +70°C  
SUBSTRATE (8)  
SOURCE 2 (7)  
8-Pin  
CERDIP  
8-Pin  
Plastic Dip  
8-Pin  
SOIC  
Package  
Package  
Package  
ALD1101A PA  
ALD1101B PA  
ALD1101 PA  
GATE 2 (6)  
ALD1101 DA  
ALD1101 SA  
* Contact factory for industrial temperature range.  
© 1998 Advanced Linear Devices, Inc. 415Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com  

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