EM-6781

更新时间： 2024-02-24 08:56:17

品牌	Logo	应用领域
AKM		传感器换能器磁场传感器输出元件
页数	文件大小	规格书
3页	133K
描述
EM-6781 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC

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技术参数
数据手册

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EM-6781 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	Base Number Matches：	1

EM-6781 数据手册

Monolithic Hall Effect ICs

Shipped in packet-tape reel(3000pcs/Reel)

EM-6781

EM-6781 is ultra-small Hall effect ICs of a single silicon chip composed of Hall element and a signal processing IC.

Omnipolar Hall

Supply Voltage

Hall Element

Pulse

Excitation

High Sensitivity

Bop：3mT

Output

CMOS

SMT

Effect Switch

1.6～5.5Ｖ

●Operational Characteristics

Vout

VOH

Marking

1：VDD

2：VSS

BhN

BhS

VOL

3：OUT

N or S

BopN BrpN

N-pole

BrpS BopS

S-pole

Magnetic flux density

●Functional Block Diagram

1:VDD

Switch

●Absolute Maximum Ratings（Ta=25℃）

Item

Symbol

Limit

Unit

3:OUT

2:Vss

℃

VDD

－0.1 ～ 6.0

Supply Voltage

Output Current

Operating Temperature Range

Storage Temperature Range

±0.5

out

Topr

Tstg

－30 ～ 85

Pulse

Hall

Chopper Amplifier Schmitt

Output

Stage

Regulator Element Stabilizer

trigger

℃

－40 ～ 125

&Latch

●Magnetic q and Electrical Characteristics（Ta=25℃ VDD=1.85V）

●Magnetic Characteristics w（Ta=－30℃～85℃ VDD=1.85V）

Item

Symbol

Conditions

Min.

Typ. Max. Unit

Item Conditions Min. Typ. Max. Unit

Symbol

B_OP

Supply Voltage

Operating Point

Release Point

H y s t e r e s i s

Operating Point

Release Point

H y s t e r e s i s

VDD

1.6

1.4*

1.1

5.5

4.0

1.2

0.9

0.1

3.0

2.2

0.8

4.4

4.1

1.7

B_OP

B S

B N

3.0

2.2

0.8

B S

B N

B S

B N

3.7*

1.5*

100

B S

B N

Note) The above specifications are design targets.

0.3*

e r i o d

●Application Circuit

Io=－0.5mA

Io=＋0.5mA

Average

VDD－0.4

Output High Voltage

Output Low Voltage

Supply Current

GND

0.4

VSS

Bypass Capacitor

IDD

6.5

μA

EM-6781

0.1μF

1［mT］=10［Gauss］

VDD

OUT

The characteristics with「*」marks are design targets.

VDD

CMOS

12 3

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