Datasheet > AIMZH120R040M1T

AIMZH120R040M1T

更新时间： 2024-04-09 19:02:04

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	1797K
描述
With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-cla

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AIMZH120R040M1T 数据手册

AIMZH120R040M1T

CoolSiC^™1200 V SiC Trench MOSFET

Final datasheet

CoolSiC^™1200 V SiC Trench MOSFET

Features

• V_DSS= 1200 V at T_vj= -55...175°C

• I_DDC= 55 A at T_C= 25°C

• R_DS(on)= 40 mΩ at V_GS= 20 V, T_vj= 25°C

• New performance-optimized chip technology (Gen1p) with improved R_DSon* A FOM

• Increased recommended turn-on voltage (V_GS(on)= 20 V) for lower R_DS(on)

• Best in class switching energy for lower switching losses and reduced cooling eﬀorts

• Lowest device capacitances for higher switching speeds and higher power density

• A combination of low C_rss/C_issratio and high V_GS(th)to avoid parasitic turn-on and enable unipolar

gate driving

• Reduced total gate charge Q_Gtotfor lower driving power and losses

• .XT die attach technology for best in class thermal performance

• Sense pin for optimized switching performance

• Suitable for HV creepage requirements

Potential applications

• On-board charger

• DC/DC converter

• Auxiliary drives

Product validation

• Qualified for Automotive Applications. Product Validation according to AEC-Q100/101

Description

Pin definition:

1 – drain

2 – source

3 – Kelvin sense contact

4 – gate

Type

Package

Marking

AIMZH120R040M1T

PG-TO247-4-STD-NT6.7

A12M1T040

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.00

2023-11-29

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