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AIMBG120R060M1 PDF预览

AIMBG120R060M1

更新时间: 2024-11-21 14:56:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
15页 1510K
描述
The?1200V?SiC Mosfet?for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles.

AIMBG120R060M1 数据手册

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AIMBG120R060M1  
CoolSiC 1200 V SiC Trench MOSFET  
CoolSiC 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET  
Features  
• VDSS = 1200 V at Tvj = -55...175 °C  
TAB  
• IDDC = 38 A at TC = 25°C  
• RDS(on) = 60 mΩ at VGS = 20 V, Tvj = 25°C  
• New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM  
• Best in class switching energy for lower switching losses and reduced cooling efforts  
• Lowest device capacitances for higher switching speeds and higher power density  
1
2
3
4
5
6
7
• A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar  
gate driving  
• Reduced total gate charge QGtot for lower driving power and losses  
• Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)  
• .XT die attach technology for best in class thermal performance  
• Low package stray inductance for faster and cleaner switching  
• Sense (Kelvin) source pin for better gate control and reduced switching losses  
• Minimal creepage distance 5.85 mm (material group II) to fit 800 V applications without coating  
• SMT package for automated assembly and reduced system costs  
Potential applications  
• On-board charger  
• DC/DC converter  
• Auxiliary drives  
Product validation  
• Qualified for Automotive Applications. Product Validation according to AEC-Q100/101  
Description  
Pin definition:  
• Pin 1 - Gate  
• Pin 2 - Kelvin sense contact  
• Pin 3…7 - Source  
• Tab - Drain  
Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction  
Type  
Package  
Marking  
AIMBG120R060M1  
PG-TO263-7-HV-ND5.8  
AS60MM1  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.00  
2023-05-16  

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