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AIDK12S65C5 PDF预览

AIDK12S65C5

更新时间: 2024-11-21 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON 双极性晶体管
页数 文件大小 规格书
11页 921K
描述
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS? portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.?

AIDK12S65C5 数据手册

 浏览型号AIDK12S65C5的Datasheet PDF文件第2页浏览型号AIDK12S65C5的Datasheet PDF文件第3页浏览型号AIDK12S65C5的Datasheet PDF文件第4页浏览型号AIDK12S65C5的Datasheet PDF文件第5页浏览型号AIDK12S65C5的Datasheet PDF文件第6页浏览型号AIDK12S65C5的Datasheet PDF文件第7页 
AIDK12S65C5  
CoolSiC™ Automotive Schottky Diode 650V G5  
650V/12A Silicon Carbide Schottky Diode in D2PAK (Real 2 Pins)  
Features  
Revolutionary semiconductor material - Silicon Carbide  
Benchmark switching behavior  
No reverse recovery/ No forward recovery  
Temperature independent switching behavior  
High surge current capability  
Pb-free lead plating; RoHS compliant  
Junction Temperature range from -40°C to 175°C  
System efficiency improvement over Si diodes  
System cost / size savings due to reduced cooling requirements  
Enabling higher frequency / increased power density solutions  
Higher system reliability due to lower operating temperatures  
Reduced EMI  
Potential Applications  
Traction inverter  
Booster / DCDC Converter  
On board Charger / PFC  
Product Validation  
“Qualified for Automotive Applications. Product Validation according to AEC-Q100/101”  
Description  
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for  
Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers,  
this family of products shows improved efficiency over all load conditions resulting from both its thermal  
characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement  
Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements in  
the 650V voltage class.  
Product Information  
Parameter  
VDC,max  
Value/Unit  
650 V  
Pin  
Pin 1,case Cathode  
Pin 2 Anode  
Definition  
Ordering Code  
Marking  
AIDK12S65C5  
AD1265C5  
IF; TC< 124 °C  
QC; VR= 400 V  
EC; VR= 400 V  
Tj,max  
12 A  
Package  
18 nC  
PG-TO263-2-1  
SP001725244  
SP Number  
4.1 μJ  
175 °C  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
V3.0  
11.06.2019  
Page 1 of 11  

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