Datasheet > AHK6030LXINY-T1

AHK6030LXINY-T1

更新时间： 2022-11-25 11:01:15

品牌	Logo	应用领域
ANALOGICTECH		/
页数	文件大小	规格书
4页	247K
描述
30V N-Channel Power MOSFET

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AHK6030LXINY-T1 数据手册

AHK6030LX

30V N-Channel Power MOSFET

Features

General Description

PWMSwitch

Utilizing

Analogic

Tech’s

state-of-the-art

•= V_DS(MAX)= 30V

•= I_D(MAX)^(a)= 52 A @ 25°C

TrenchDMOS process, the AHK6030LX sets a

new standard in current handling capability and

efficiency for surface mount power MOSFETs.

•= I_APP(MAX)= 20A in typical computer application

•= Low Gate Charge

•= Low R_DS(ON)

Gate charge and R_DS(ON)have been optimized and

package inductance minimized to provide high

efficiency for DC-DC.

10.5 mΩ=(max), 9.5 mΩ=(typ)@V_GS= 10V

18 mΩ= (max), 14 mΩ=(typ)@ V_GS= 4.5V

DPAK-L Package DPAK Package

Applications

Drain-Connected Tab

•= DC-DC converters for CPU’s

•= High Current Load Switch

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Symbol

Description

Value

Units

V_DS

V_GS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Continuous Drain Current @ T_J=150°C ^(a)

Pulsed Drain Current ^(a)

Continuous Source Current (Source-Drain Diode) ^(a)

±52

I_DM

I_S

±56

T_A= 25°C

T_A= 70°C

P_D

Maximum Power Dissipation ^(a)

T_J, T_STG

Operating Junction and Storage Temperature Range

-55 to 150

°C

Thermal Resistance

R_θJA

R_θJC

Maximum Junction-to-Ambient ^(a)

Maximum Junction-to-Case^(a)

°C/W

3.6

Advanced Analogic Technologies, Inc.

1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086

(408)524-9684 Fax (408)524-9689

6030LX.2001.05.0.91

9-19

12 3 4

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