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AHK6030LINY-T1 PDF预览

AHK6030LINY-T1

更新时间: 2022-11-25 11:01:15
品牌 Logo 应用领域
ANALOGICTECH /
页数 文件大小 规格书
4页 226K
描述
30V N-Channel Power MOSFET

AHK6030LINY-T1 数据手册

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AHK6030L  
30V N-Channel Power MOSFET  
TM  
Features  
General Description  
PWMSwitch  
Utilizing  
Analogic  
Tech’s  
state-of-the-art  
= VDS(MAX) = 30V  
â
= ID(MAX)(a) = 44 A @ 25°C  
TrenchDMOS process, the AHK6030L sets a  
new standard in current handling capability and  
efficiency for surface mount power MOSFETs.  
= IAPP(MAX) = 17A in typical computer application  
= Low Gate Charge  
= Low RDS(ON)  
:
Gate charge and RDS(ON) have been optimized and  
package inductance minimized to provide high  
efficiency for DC-DC converters.  
13.5 m=(max), 9.5 m=(typ) @VGS = 10V  
20 m=(max), 14 m=(typ) @VGS = 4.5V  
DPAK-L Package DPAK Package  
Applications  
Drain-Connected Tab  
Drain-Connected Tab  
= DC-DC converters for CPU’s  
= High Current Load Switch  
G
S
G
S
Absolute Maximum Ratings (TA=25°C unless otherwise noted)  
Symbol  
Description  
Value  
30  
Units  
VDS  
VGS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
V
±20  
Continuous Drain Current @ TJ=150°C (a)  
Pulsed Drain Current (a)  
Continuous Source Current (Source-Drain Diode) (a)  
±44  
A
IDM  
IS  
±52  
23  
TA = 25°C  
TA = 70°C  
39  
PD  
Maximum Power Dissipation (a)  
W
25  
TJ, TSTG  
Operating Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Resistance  
RθJA  
RθJC  
Maximum Junction-to-Ambient (a)  
Maximum Junction-to-Case(a)  
96  
°C/W  
°C/W  
3.2  
Advanced Analogic Technologies, Inc.  
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086  
(408)524-9684 Fax (408)524-9689  
6030L.2001.05.0.91  

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