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AH118-89PCB900 PDF预览

AH118-89PCB900

更新时间: 2022-04-23 23:00:11
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WJCI 放大器
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8页 262K
描述
 Watt, High Linearity InGaP HBT Amplifier

AH118-89PCB900 数据手册

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The Communications Edge TM  
AH118  
¼ Watt, High Linearity InGaP HBT Amplifier  
Product Information  
Product Features  
Product Description  
Functional Diagram  
GND  
The AH118 is a high dynamic range driver amplifier in a  
low-cost surface mount package. The InGaP/GaAs HBT is  
able to achieve high performance across a broad range with  
+40.5 dBm OIP3 and +24.7 dBm of compressed 1dB  
power. The AH118 is available in a lead-free/green/RoHS-  
compliant SOT-89 package. All devices are 100% RF and  
DC tested.  
60 – 3500 MHz  
4
+24.7 dBm P1dB  
+40.5 dBm Output IP3  
20.4 dB Gain @ 900 MHz  
16.5 dB Gain @ 1900 MHz  
+5V Single Positive Supply  
1
2
3
The AH118 is targeted for use as a driver amplifier in  
wireless infrastructure where high linearity and medium  
power is required. Internal biasing allows the AH118 to  
maintain high linearity over temperature and operate  
directly off a single +5V supply. This combination makes  
the device an excellent candidate for transceiver line cards  
in current and next generation multi-carrier 3G base  
stations.  
RF IN  
GND  
RF OUT  
Lead-free/Green/RoHS-  
compliant SOT-89 Package  
Function  
Pin No.  
Input / Base  
Output / Collector  
Ground  
1
3
2, 4  
Applications  
Final stage amplifiers for  
Repeaters  
Mobile Infrastructure  
DBS / WLL / W-LAN  
Defense / Homeland Security  
Specifications (1)  
Typical Performance (3)  
Parameter  
Operational Bandwidth  
Test Frequency  
Gain  
Input Return Loss  
Output Return Loss  
Output P1dB  
Output IP3 (2)  
Units Min Typ Max  
Parameter  
Frequency  
S21 - Gain  
S11 - Input R.L.  
S22 - Output R.L.  
Output P1dB  
Output IP3  
Units  
MHz  
dB  
dB  
dB  
Typical  
MHz  
MHz  
dB  
60  
3500  
900  
20.4  
-15  
-12  
+24.2  
+40  
1900  
16.5  
-12  
-20  
+24.7  
+40.5  
2140  
16.3  
-15  
-16  
+24.7  
+40.5  
1900  
16.5  
12  
13.5  
dB  
dBm  
dBm  
dB  
20  
dBm  
dBm  
+23  
+39.5  
+24.7  
+40.5  
IS-95A Channel Power  
dBm  
+18.2  
+18  
@ -45 dBc ACPR,  
IS-95A Channel Power  
dBm  
dBm  
+18  
wCDMA Channel Power  
@ -45 dBc ACPR  
dBm  
dB  
+16.7  
4.8  
@ -45 dBc ACLR  
wCDMA Channel Power  
+16.7  
Noise Figure  
Supply Bias  
4.0  
4.3  
@ -45 dBc ACLR, 2140 MHz  
+5 V @ 160 mA  
Noise Figure  
Operating Current Range  
Device Voltage  
dB  
mA  
V
4.3  
160  
+5  
140  
175  
3. Typical parameters reflect performance in a tuned application circuit: Vsupply = +5 V, 160 mA,  
+25 °C  
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.  
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The  
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.  
Absolute Maximum Rating  
Ordering Information  
Parameter  
Rating  
-40 to +85 °C  
-65 to +150 °C  
+15 dBm  
+6 V  
220 mA  
+250 °C  
Operating Case Temperature  
Storage Temperature  
RF Input Power (continuous)  
Device Voltage  
Part No.  
AH118-89G  
Description  
High Linearity InGaP HBT Amplifier  
(lead-free/green/RoHS-compliant SOT-89 package)  
AH118-89PCB900  
AH118-89PCB1900  
AH118-89PCB2140  
900 MHz Evaluation Board  
1900 MHz Evaluation Board  
2140 MHz Evaluation Board  
Device Current  
Junction Temperature  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
Page 1 of 8 May 2006  
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com  

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