Datasheet > AGR027N10S

AGR027N10S

更新时间： 2024-11-29 18:06:55

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AGR027N10S 数据手册

AGR027N10S

N-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

100V

2.7mΩ@10V

220A

Feature

Application



Fast Switching



PWM Application

Low Gate Charge and Rdson

Hard switched and high frequency circuits

Power Management

Advanced Split Gate Trench Technology

Package

Circuit diagram

TO-263AB

Marking

010N02BGH

Document ID

AS-3150487

Issued Date

2013/03/08

Revised Date

2024/02/21

Revision

Page.

Page 1

12 3 4 5

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