Datasheet > AGMP00504M

AGMP00504M

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1050K
描述
中低压MOSFET

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中文翻译

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数据手册

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AGMP00504M 数据手册

AGMP00504M

GOOD-ARK Electronics

P-Channel -40V (D-S) Power MOSFET

Features

● 100% Avalanche Tested

● Extremely Low Losses with Low FOM Rdson*Qg

● RoHS Compliant, Halogen Free, Pb-Free

● AEC-Q101 Qualified

● MSL 1

PDFN5060

5，6，7，8

Applications

● Automotive Applications

● Power Management

● PWM Applications

4 G

1，2，3

Absolute Maximum Ratings (T_J=25°C unless otherwise noted)

Parameter

Symbol

Ratings

-40

Unit

Drain-Source Voltage

Gate Source Voltage

V_DS

V_GS

±20

-80

T_C=25°C

Drain Current Continuous

I_D

T_C=100°C

-51

Drain Current Pulse (Note 1)

I_DM

-320

576

Single Pulse Avalanche Energy (Note 2)

E_AS

T_C=25°C

Power Dissipation

P_D

T_C=100°C

Operating Temperature/ Storage Temperature

T_J,T_STG

-55 to +150

°C

Note 1: Repetitive rating; pulse width limited by maximum junction temperature.

Note 2: VDD = 20V, VGS = 10V, L = 0.5mH, RG = 25Ω, starting T_J= 25 °C.

Thermal Characteristics

Parameter

Symbol

R_θJC

MAX

2.15

Unit

°C/W

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Ambient (Note 3)

R_θJA

Note 3: Device mounted on 1 square inch FR4 PCB board, with 2oz single-sided copper, in a 25°C still air

environment.

www.goodark.com

Version: Rev.A

12 3 4 5 6 7

中文翻译

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