Datasheet > AGMN00804LR

AGMN00804LR

更新时间： 2025-07-18 18:51:27

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
8页	1727K
描述
中低压MOSFET

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中文翻译

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数据手册

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AGMN00804LR 数据手册

AGMN00804LR

GOOD-ARK Electronics

N-Channel 40V (D-S) Power MOSFET

Features

● 100% Avalanche Tested

● Extremely Low Losses with Low FOM Rdson*Qg

● RoHS Compliant, Halogen Free, Pb-Free

● AEC-Q101 Qualified

LFPAK5060

● MSL 1

D 5

Applications

● Automotive systems

4 G

● Motors, lamps and solenoid control

● Ultra high performance power switching

S 1,2,3

Absolute Maximum Ratings (T_J=25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain Source Voltage

Gate Source Voltage

V_DS

V_GS

±20

T_C=25°C

480

Drain Current, Continuous

V_GS=10V

I_D

T_C=100°C

339

Drain Current, Pulsed (Note 1)

I_DM

1440

125

Single Avalanche Energy (Note 2)

E_AS

T_C=25°C

300

Power Dissipation

P_D

T_C=100°C

150

Operating Junction/ Storage Temperature Range

T_J/ T_STG

-55 to +175

°C

Note 1: Single pulse; t_p≤ 1us.

Note 2: V_DD= 20V, V_GS= 10V, L = 0.5mH, R_G= 25Ω, starting T_J= 25 °C.

Thermal Characteristics

Parameter

Symbol

R_thJC

Max

0.5

Unit

°C/W

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient (Note 3)

R_thJA

62.5

Note 3: Device mounted on 1 square inch FR4 PCB board, with 2oz single-sided copper, in a 25°C still air environment.

www.goodark.com

Version: Rev.A

12 3 4 5 6 7 8

中文翻译

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