MGS-71008

更新时间： 2024-01-13 10:04:52

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波开关射频开关微波开关光电二极管
页数	文件大小	规格书
5页	54K
描述
Absorptive SPDT GaAs MMIC Switch

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技术参数
数据手册

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MGS-71008 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SOP8,.25	Reach Compliance Code：	unknown
风险等级：	5.9	Is Samacsys：	N
1dB压缩点：	16 dBm	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	26.99 dBm
最大插入损耗：	1.9 dB	最小隔离度：	16 dB
JESD-609代码：	e0	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	8
准时：	0.003 µs	最大工作频率：	3000 MHz
最小工作频率：		封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SOP8,.25	端口终止：	ABSORPTIVE
电源：	-5 V	射频/微波设备类型：	SPDT
子类别：	RF/Microwave Switches	表面贴装：	YES
技术：	GAAS	端子面层：	Tin/Lead (Sn/Pb)
最大电压驻波比：	1.7	Base Number Matches：	1

MGS-71008 数据手册

Absorptive SPDT GaAs MMIC

Switch

Technical Data

MGS-71008

surface-mount SO-8 package.

Features

SO-8 Package

Switching is actuated by a -5 V

control voltage per the truth table

shown on the next page. -3.3 V

operation is also possible with

• Single-Pole, Double-Throw

Output

• BroadBandwidth:

DCto3 GHz

some reduction in P_{1 dB}and IP .

• High Isolation:

37 dB Typicalat1 GHz

The MGS-71008 is designed for

high volume commercial applica-

tions where low insertion loss,

high isolation, and fast switching

speed are required. Its low cost

and high performance make it

suitable for a wide variety of uses

such as digital cellular, spread

spectrum, GPS, and other RF

switching applications. Refer to

applications note AN-G007 for

more application details.

• Fast Switching Time:

AC Equivalent

Circuit/Pinout

3 ns Typical

• Ultra Low DC Power

Consumption

Ground

• Small Surface-Mount Plastic

Package

Control 1

Control 2

Description

TheMGS-71008isasingle-pole,

double-throw monolithic GaAs

MMIC switch. The J2 and J3 of the

MGS-71008areterminatedto

ground by internal 50 Ω load

resistors when “off” (a reflective

version, theMGS-70008, which

terminates the “off” port to

ground, is also available). The

switch is sealed in a small, plastic,

The die is fabricated using HP’s

nominal0.3 micronrecessed

Schottky-barrier-gate, gold

metallization, and silicon nitride

passivation to achieve excellent

performance, uniformity, and

reliability.

7-161

5965-9118E

12 3 4 5

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