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MGS-70008 PDF预览

MGS-70008

更新时间: 2024-02-06 23:09:35
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波开关射频开关微波开关光电二极管
页数 文件大小 规格书
5页 54K
描述
Reflective SPDT GaAs MMIC Switch

MGS-70008 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SOP8,.25Reach Compliance Code:unknown
风险等级:5.15Is Samacsys:N
1dB压缩点:18 dBm特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):30 dBm
最大插入损耗:1.1 dB最小隔离度:16 dB
JESD-609代码:e0安装特点:SURFACE MOUNT
功能数量:1端子数量:8
准时:0.003 µs最大工作频率:3000 MHz
最小工作频率:封装主体材料:PLASTIC/EPOXY
封装等效代码:SOP8,.25端口终止:REFLECTIVE
电源:-5 V射频/微波设备类型:SPDT
子类别:RF/Microwave Switches表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn/Pb)
最大电压驻波比:1.4Base Number Matches:1

MGS-70008 数据手册

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Reflective SPDT GaAs MMIC  
Switch  
Technical Data  
MGS-70008  
sealed in a small, plastic, surface-  
Features  
SO-8 Package  
mount SO-8 package. Switching is  
actuated by a -5 V control voltage  
per the truth table shown on the  
next page. -3.3 V operation is also  
possible with some reduction in  
• Single-Pole, Double-Throw  
Output  
• BroadBandwidth:  
DCto3 GHz  
• Low Insertion Loss:  
P1 dB and IP .  
3
0.8 dB Typicalat1 GHz  
The MGS-70008 is designed for  
high volume commercial applica-  
tions where low insertion loss,  
high isolation, and fast switching  
speed are required. Its low cost  
and high performance make it  
suitable for a wide variety of uses  
such as digital cellular, spread  
spectrum, GPS, and other RF  
switching applications. Refer to  
applications note AN-G007 for  
more application details.  
• Fast Switching Time:  
AC Equivalent  
Circuit/Pinout  
3 ns Typical  
• Ultra Low DC Power  
Consumption  
J1  
Ground  
J2  
Ground  
Ground  
J3  
• Small Surface-Mount Plastic  
Package  
Control 1  
Control 2  
Description  
TheMGS-70008isasingle-pole,  
double-throw monolithic GaAs  
MMIC switch. The J2 and J3 of the  
MGS-70008areterminatedto  
ground when “off” (an absorptive  
version, theMGS-71008, which  
terminates the “off” port in an  
internal 50 resistor, is also  
available). The switches are  
The die is fabricated using HP’s  
nominal0.7 µmSchottky-barrier-  
gate, gold metallization, and  
silicon nitride passivation to  
achieve excellent performance,  
uniformity, and reliability.  
7-156  
5965-9116E  

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