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HL6340MG PDF预览

HL6340MG

更新时间: 2024-01-07 17:00:12
品牌 Logo 应用领域
安捷伦 - AGILENT 光电
页数 文件大小 规格书
5页 87K
描述
Circular Beam Low Operating Current

HL6340MG 技术参数

生命周期:TransferredReach Compliance Code:compliant
风险等级:5.02Is Samacsys:N
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:50 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:5 mW
峰值波长:635 nm形状:ROUND
尺寸:1.6 mm最大阈值电流:30 mA
Base Number Matches:1

HL6340MG 数据手册

 浏览型号HL6340MG的Datasheet PDF文件第2页浏览型号HL6340MG的Datasheet PDF文件第3页浏览型号HL6340MG的Datasheet PDF文件第4页浏览型号HL6340MG的Datasheet PDF文件第5页 
HL6340MG/41MG  
Circular Beam Low Operating Current  
ODE-208-035A (Z)  
Rev.1  
Feb. 01, 2008  
Description  
The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These  
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source  
for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Internal Circuit  
HL6341MG  
Package Type  
HL6340MG/41MG: MG  
Internal Circuit  
HL6340MG  
Optical output power: 5 mW CW  
Single longitudinal mode  
Visible light power: 635 nm Typ  
Low operating current: 25 mA Typ  
Low aspect ratio: 1.2 Typ  
1
3
1
3
PD  
LD  
PD  
LD  
Operating temperature: +50°C  
TM mode oscillation  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
Pulse optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
mW  
V
PO  
5
6 *  
2
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
PD reverse voltage  
30  
V
Operating temperature  
Storage temperature  
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs , duty 50%  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Slope efficiency  
Symbol  
Ith  
Min  
Typ  
20  
Max  
Unit  
Test Conditions  
30  
1.1  
40  
mA  
ηs  
0.5  
0.8  
25  
mW/mA 3 (mW) / (I(4mW) – I(1mW))  
Operating current  
Operating voltage  
Lasing wavelength  
IOP  
VOP  
λp  
mA  
V
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
PO = 5 mW  
2.4  
635  
17  
2.7  
640  
25  
630  
13  
nm  
°
Beam divergence  
parallel to the junction  
θ//  
Beam divergence  
perpendicular to the junction  
θ⊥  
16  
20  
25  
°
PO = 5 mW  
Aspect ratio  
θ⊥/θ//  
1.2  
1.5  
PO = 5 mW  
Monitor current  
IS  
0.01  
0.03  
0.06  
mA  
PO = 5 mW, VR(PD) = 5 V  
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as  
by ESD.  
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a  
board.  
Rev.1 Feb. 01, 2008 page 1 of 5  

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