HL6340MG/41MG
Circular Beam Low Operating Current
ODE-208-035A (Z)
Rev.1
Feb. 01, 2008
Description
The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These
products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source
for laser levelers, laser scanners and optical equipment for measurement.
Features
Internal Circuit
• HL6341MG
Package Type
• HL6340MG/41MG: MG
Internal Circuit
• HL6340MG
•
•
•
•
•
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Optical output power: 5 mW CW
Single longitudinal mode
Visible light power: 635 nm Typ
Low operating current: 25 mA Typ
Low aspect ratio: 1.2 Typ
1
3
1
3
PD
LD
PD
LD
Operating temperature: +50°C
TM mode oscillation
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
LD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
5
6 *
2
PO(pulse)
VR(LD)
VR(PD)
Topr
PD reverse voltage
30
V
Operating temperature
Storage temperature
–10 to +50
–40 to +85
°C
Tstg
°C
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Slope efficiency
Symbol
Ith
Min
—
Typ
20
Max
Unit
Test Conditions
30
1.1
40
mA
—
ηs
0.5
—
0.8
25
mW/mA 3 (mW) / (I(4mW) – I(1mW))
Operating current
Operating voltage
Lasing wavelength
IOP
VOP
λp
mA
V
PO = 5 mW
PO = 5 mW
PO = 5 mW
PO = 5 mW
—
2.4
635
17
2.7
640
25
630
13
nm
°
Beam divergence
parallel to the junction
θ//
Beam divergence
perpendicular to the junction
θ⊥
16
20
25
°
PO = 5 mW
Aspect ratio
θ⊥/θ//
—
1.2
1.5
—
PO = 5 mW
Monitor current
IS
0.01
0.03
0.06
mA
PO = 5 mW, VR(PD) = 5 V
Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as
by ESD.
2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a
board.
Rev.1 Feb. 01, 2008 page 1 of 5