Datasheet > HL6340MG_08

HL6340MG_08

更新时间： 2022-04-23 23:00:11

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安捷伦 - AGILENT		/
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描述
Circular Beam Low Operating Current

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HL6340MG_08 数据手册

HL6340MG/41MG

Circular Beam Low Operating Current

ODE-208-035A (Z)

Rev.1

Feb. 01, 2008

Description

The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These

products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source

for laser levelers, laser scanners and optical equipment for measurement.

Features

Internal Circuit

• HL6341MG

Package Type

• HL6340MG/41MG: MG

Internal Circuit

• HL6340MG

•

Optical output power: 5 mW CW

Single longitudinal mode

Visible light power: 635 nm Typ

Low operating current: 25 mA Typ

Low aspect ratio: 1.2 Typ

Operating temperature: +50°C

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Pulse optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

6 *

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

PD reverse voltage

Operating temperature

Storage temperature

–10 to +50

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Slope efficiency

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

1.1

—

ηs

0.5

—

0.8

mW/mA 3 (mW) / (I_(4mW)– I_(1mW))

Operating current

Operating voltage

Lasing wavelength

I_OP

V_OP

λp

P_O= 5 mW

—

2.4

635

2.7

640

630

Beam divergence

parallel to the junction

θ//

Beam divergence

perpendicular to the junction

θ⊥

P_O= 5 mW

Aspect ratio

θ⊥/θ//

—

1.2

1.5

—

P_O= 5 mW

Monitor current

I_S

0.01

0.03

0.06

P_O= 5 mW, V_R(PD)= 5 V

Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as

by ESD.

2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a

board.

Rev.1 Feb. 01, 2008 page 1 of 5

12 3 4 5

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