AMMC-5026

更新时间： 2024-02-23 01:44:12

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	169K
描述
2-35 GHz GaAs MMIC Traveling Wave Amplifier

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技术参数
数据手册

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AMMC-5026 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
ECCN代码：	3A001.B.2.D	HTS代码：	8542.33.00.01
风险等级：	5.1	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	8.5 dB
最大输入功率 (CW)：	23 dBm	JESD-609代码：	e4
最大工作频率：	35000 MHz	最小工作频率：	2000 MHz
射频/微波设备类型：	WIDE BAND MEDIUM POWER	端子面层：	Gold (Au)
Base Number Matches：	1

AMMC-5026 数据手册

Agilent AMMC-5026

2–35 GHz GaAs MMIC

Traveling Wave Amplifier

Data Sheet

Features

• Frequency range: 2– 35 GHz

• Gain: 10.5 dB

• Gain flatness: ±0.8 dB

•

Return loss:

Input 17 dB, Output: 15 dB

• Output power (P-1dB):

24 dBm at 10 GHz

23 dBm at 20 GHz

22 dBm at 26 GHz

• Noise figure (6–19 GHz): ≤4 dB

Chip Size:

3050 x 840 µm (119 x 33 mils)

Applications

Chip Size Tolerance: ±10 µm (±0.4 mils)

• Broadband gain block

Chip Thickness:

Pad Dimensions:

100 ± 10 µm (4 ± 0.4 mils)

75 x 75 µm (2.9 ± 0.4 mils)

• Broadband driver amplifier

• 10 Gb/s Fiber Optics

Description

Absolute Maximum Ratings^[1]

The AMMC-5026 is a broadband

PHEMT GaAs MMIC Traveling

Wave Amplifier (TWA) designed

for medium output power and

high gain over the full 2 GHz to

35 GHz frequency range. The

design employs a 6-section

cascode connected FET structure

to provide flat gain and medium

power as well as uniform group

delay.

Symbol

Parameters/Conditions

Units

Min.

Max.

V_dd

I_dd

Positive Drain Voltage

Total Drain Current

450

V_g1

I_g1

First Gate Voltage

-5

First Gate Current

-9

V_g2

I_g2

Second Gate Voltage

Second Gate Current

CW Input Power

-3

+3.5

dBm

°C

-10

P_in

T_ch

Channel Temperature

Operating Backside Temperature

Storage Temperature

Max. Assembly Temp (60 sec max)

+150

T_b

-55

-65

T_stg

T_max

Notes:

+165

+300

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

12 3 4 5 6 7 8

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