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ABA-54563-BLK PDF预览

ABA-54563-BLK

更新时间: 2024-02-21 00:50:14
品牌 Logo 应用领域
安捷伦 - AGILENT 放大器射频微波
页数 文件大小 规格书
11页 108K
描述
RF/Microwave Amplifier, 1 Func, BIPolar,

ABA-54563-BLK 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP6,.08Reach Compliance Code:unknown
风险等级:5.09其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:21 dB最大输入功率 (CW):20 dBm
安装特点:SURFACE MOUNT功能数量:1
端子数量:6最大工作频率:3400 MHz
最小工作频率:封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP6,.08电源:5 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:90 mA表面贴装:YES
技术:BIPOLAR最大电压驻波比:1.2
Base Number Matches:1

ABA-54563-BLK 数据手册

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Agilent ABA-54563  
3.4 GHz Broadband Silicon  
RFIC Amplifier  
Data Sheet  
Features  
• Single +5V Supply  
• High linearity  
• VSWR < 1.4 throughout operating  
frequency  
• Miniature SOT363 (SC70) Package  
• Unconditionally stable  
• Lead-free  
Description  
Surface Mount Package  
SOT-363/SC70  
Agilent ’s ABA-54563 is an economi-  
cal, easy-to-use internally 50-ohm  
matched silicon monolithic amplifier  
that offers excellent gain and  
broadband response from DC to  
3.4 GHz. Packaged in an ultraminia-  
ture industry-standard SOT-363  
package, it requires half the board  
space of a SOT-143 package.  
Typical Performance at +5V/79 mA  
2 GHz  
• 23 dB Gain  
• 27.8 dBm OIP3  
• 16.1 dBm P1dB  
Pin Connections and  
Package Marking  
• 4.4 dB Noise Figure  
At 2 GHz, the ABA-54563 offers a  
small-signal gain of 23 dB, output  
P1dB of 16.1 dB and 27.8 dBm  
output third order intercept point.  
It is suitable for use as buffer  
amplifiers for wideband applica-  
tions. They are designed for low  
cost gain blocks in cellular applica-  
tions, DBS tuners, LNB and other  
wireless communications systems.  
200 MHz  
• 23 dB Gain  
Output  
& Vcc  
GND 1  
GND 2  
Input  
• 35 dBm OIP3  
GND 3  
Vcc  
• 18 dBm P1dB  
• 3.6 dB Noise Figure  
Note:  
Top View. Package marking provides orientation  
and identification. “x” is character to identify  
date code.  
At IF frequencies, the ABA-54563  
offers good linearity performance  
with a typical OIP3 of 35 dBm at  
200 MHz.  
Simplified Schematic  
ABA-54563 is fabricated using  
Agilent’s HP25 silicon bipolar  
RF  
Vcc  
Output  
& Vcc  
process, which employs a double-  
diffused single polysilicon process  
with self-aligned submicron emitter  
geometry. The process is capable of  
simultaneous high fT and high NPN  
breakdown (25 GHz fT at 6V BVCEO).  
The process utilizes industry stan-  
dard device oxide isolation technolo-  
gies and submicron aluminum  
RF  
Input  
Ground 2  
Ground 3  
multilayer interconnect to achieve  
superior performance, high unifor-  
mity and proven reliability.  
Ground 1  

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