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ABA-53563-TR1 PDF预览

ABA-53563-TR1

更新时间: 2024-01-30 21:39:21
品牌 Logo 应用领域
安捷伦 - AGILENT 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 108K
描述
3.5 GHz Broadband Silicon RFIC Amplifier

ABA-53563-TR1 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSSOP6,.08Reach Compliance Code:unknown
风险等级:5.13其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:20 dB最大输入功率 (CW):20 dBm
JESD-609代码:e3安装特点:SURFACE MOUNT
功能数量:1端子数量:6
最大工作频率:3500 MHz最小工作频率:
封装主体材料:PLASTIC/EPOXY封装等效代码:TSSOP6,.08
电源:5 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:57 mA
表面贴装:YES技术:BIPOLAR
端子面层:Tin (Sn)最大电压驻波比:1.2
Base Number Matches:1

ABA-53563-TR1 数据手册

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Agilent ABA-53563  
3.5 GHz Broadband Silicon  
RFIC Amplifier  
Data Sheet  
Features  
• Operating frequency: DC ~ 3.5 GHz  
• 21.5 dB gain  
• VSWR < 2.0 throughout operating  
frequency  
• 12.7 dBm output P1dB  
• 3.5 dB noise figure  
Description  
Surface Mount Package  
SOT-363/SC70  
Agilent’s ABA-53563 is an  
economical, easy-to-use, inter-  
nally 50-ohm matched silicon  
monolithic amplifier that offers  
excellent gain and flat broadband  
response from DC to 3.5 GHz.  
Packaged in an ultraminiature  
industry-standard SOT-363  
package, it requires half the board  
space of a SOT-143 package.  
• Unconditionally stable  
• Single 5V supply (Id = 46 mA)  
Applications  
• Amplifier for cellular, cordless,  
special mobile radio, PCS, ISM,  
wireless LAN, DBS, TVRO, and TV  
tuner applications  
Pin Connections and  
Package Marking  
At 2 GHz, the ABA-53563 offers a  
small-signal gain of 21.5 dB,  
output P1dB of 12.7 dBm and  
22.9 dBm output third order  
intercept point. It is suitable for  
use as buffer amplifiers for  
wideband applications. They are  
designed for low cost gain blocks  
in cellular applications, DBS  
tuners, LNB and other wireless  
communications systems.  
Output  
& Vcc  
GND 1  
GND 2  
Input  
GND 3  
Vcc  
Note:  
Top View. Package marking provides orientation  
and identification. “x” is character to identify  
date code.  
ABA-53563 is fabricated using  
Agilent’s HP25 silicon bipolar  
process, which employs a double-  
diffused single polysilicon  
process with self-aligned submi-  
cron emitter geometry. The  
process is capable of simulta-  
neous high fT and high NPN  
breakdown (25 GHz fT at 6V  
BVCEO). The process utilizes  
industry standard device oxide  
isolation technologies and  
Simplified Schematic  
RF  
Vcc  
Output  
& Vcc  
RF  
Input  
Ground 2  
Ground 3  
submicron aluminum multilayer  
interconnect to achieve superior  
performance, high uniformity,  
and proven reliability.  
Ground 1  

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