Datasheet > 1GG7-8045

1GG7-8045

更新时间： 2024-02-25 07:10:47

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
6页	252K
描述
Wide Band Low Power Amplifier, 2000MHz Min, 26500MHz Max, 1 Func, GAAS, 0.1173 X 0.0303 INCH, 0.0056 INCH HEIGHT, DIE

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1GG7-8045 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	DIE OR CHIP	Reach Compliance Code：	compliant
风险等级：	5.72	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	5.5 dB
最大输入功率 (CW)：	25 dBm	功能数量：	1
最大工作频率：	26500 MHz	最小工作频率：	2000 MHz
最低工作温度：	-55 °C	封装等效代码：	DIE OR CHIP
电源：	11 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	技术：	GAAS
Base Number Matches：	1

1GG7-8045 数据手册

Agilent 1GG7-8045

2-26.5 GHz

High Power Output Amplifier

TC724

Data Sheet

Features

•Wide–Frequency Range:

2–26.5 GHz

•Moderate Gain: 7.5 dB

•Gain Flatness: ± 1 dB

•Return Loss:

Input: –17 dB

Output: –14 dB

•Low–Frequency Operation

Capability: < 2 GHz

2980 × 770 µm (117.3 × 30.3 mils)

•Gain Control:

Chip Size:

Chip Size Tolerance:

Chip Thickness:

Pad Dimensions:

±10 µm (±0.4 mils)

30 dB Dynamic Range

127 ± 15 µm (5.0 ± 0.6 mils)

75 × 75 µm (2.95 × 2.95 mils), or larger

• High Power:

20 GHz:

_–1dB: 26 dBm

_sat: 28.5 dBm

_–1dB: 23 dBm

_sat: 26 dBm

26.5 GHz:

[1]

Absolute Maximum Ratings

Symbol

V_DD

I_DD

Parameters/Conditions

Min.

Max.

13.0

450

Units

Positive Drain Voltage

Total Drain Current

volts

Description

The TC724 is a broadband GaAs

MMIC Traveling Wave Amplifier

designed for high output power

and moderate gain over the full

2 to 26.5 GHz frequency range.

Seven MESFET cascode stages

provide a flat gain response,

making the TC724 an ideal

wideband power block. E–beam

lithography is used to produce

gate lengths of ≈0.3 µm. The

TC724 incorporates advanced

MBE technology, Ti–Pt–Au gate

metallization, silicon nitride

passivation, and polyimide for

scratch protection.

V_G1

First Gate Voltage

–4.5

–10

–4.5

–25

volts

I_G1

First Gate Current

[2]

V_G2

I_G2

Second Gate Voltage

Second Gate Current

DC Power Dissipation

CW Input Power

volts

P_DC

P_in

5.8

watts

dBm

°C

T_ch

Operating Channel Temperature

Operating Case Temperature

Storage Temperature

180

T_case

T_stg

–55

–65

°C

180

300

°C

Maximum Assembly Temperature

(for 60 seconds maximum)

T_max

°C

Notes:

1. Operation in excess of any one of these conditions may result in permanent damage to this device.

T_A= 25°C except for T_ch, T_stg, and T_max

2. Minimum voltage on V_G2must not violate the following: V_G2(min)>V_DD–12 volts.

12 3 4 5 6

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