Datasheet > 1GG6-8070

1GG6-8070

更新时间： 2024-02-15 00:21:28

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波
页数	文件大小	规格书
4页	305K
描述
Wide Band Low Power Amplifier, 40000MHz Min, 68000MHz Max, 1 Func, GAAS, 0.0567 X 0.0307 INCH, 0.0031 INCH HEIGHT, DIE

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数据手册

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1GG6-8070 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.17
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	17 dB	最大输入功率 (CW)：	10 dBm
最大工作频率：	68000 MHz	最小工作频率：	40000 MHz
最低工作温度：	-55 °C	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

1GG6-8070 数据手册

Agilent 1GG6-8070

40–68 GHz Medium Power

Amplifier

TC956

Data Sheet

Features

• Frequency Range:

30–70 GHz useable range

• Small Signal Gain: 18.8 dB

• P–1 dB: 14 dBm

• P–3 dB: 17.6 dBm

• Return Loss:

10 dB Input

10 dB Output

Chip Size:

1440 x 780 µm (56.7 x 30.7 mils)

Chip Size Tolerance: ± 10 µm (± 0.4 mils)

Chip Thickness:

Pad Dimensions:

62.5 ± 15 µm (2.5 ± 0.6 mils)

80 x 80 µm (3.2 x 3.2 mils)

[1]

Absolute Maximum Ratings

Symbol

V_D1,2–5

I_DD

V_G1,2–3,4,5

P_DC

Parameters/Conditions

Drain Supply Voltage

Total Drain Current

Gate Voltage

DC Power Dissipation

CW Input Power

Backside Ambient Temperature

Operating Channel Temperature^[2]

Operating Case Temperature

Storage Temperature

Min.

–2.5

–55

Max.

3.25

350

Units

Volts

Watts

dBm

°C

Description

The TC956 is a high–gain, medi-

um–power mm–wave amplifier.

It can be used as part of a band-

ed solution to achieve respect-

able mm–wave power. Input

and output ports are matched to

50Ω.

1.2

P_in

T_A

T_ch

T_case

T_stg

Notes:

160

°C

The amplifier is biased with a

single positive drain supply

–55

–65

165

(V ) and a single negative gate

supply (V ).

1. Operation in excess of any one of these conditions may result in permanent damage to this

device. T =25°C except for T , T , and T

2. Refer to DC Specifications/Physical Properties table for derating information.

ch stg max

12 3 4

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