Datasheet > 1GG6-8054

1GG6-8054

更新时间： 2024-01-22 07:22:38

品牌	Logo	应用领域
安捷伦 - AGILENT		射频微波光电二极管
页数	文件大小	规格书
10页	274K
描述
SPDT, 75000MHz Max, 1 Func, 3dB Insertion Loss-Max, GAAS,

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技术参数
数据手册

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1GG6-8054 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	DIE OR CHIP	Reach Compliance Code：	unknown
风险等级：	5.74	1dB压缩点：	15 dBm
最大插入损耗：	3 dB	功能数量：	1
最大工作频率：	75000 MHz	封装等效代码：	DIE OR CHIP
射频/微波设备类型：	SPDT	子类别：	RF/Microwave Switches
技术：	GAAS	Base Number Matches：	1

1GG6-8054 数据手册

Agilent 1GG6-8054

DC–75 GHz SPDT GaAs

MMIC Switch

TC950

Data Sheet

Features

• Frequency Range:

DC-75 GHz

• Insertion Loss:

2.6 dB typical @ 50 GHz

• Isolation:

29 dB typical @ 50 GHz

• Return Loss:

>10 dB (Both Input &

Selected Output)

• P

-1dB

+15 dBm

• Harmonics:

<-50 dBc

Chip Size:

630 x 930 µm (24.8 x 36.6 mils)

± 10 µm (± 0.4 mils)

50 ± 15 µm (2.0 ± 0.6 mils)

80 x 80 µm (3.2 x 3.2 mils)

Chip Size Tolerance:

Chip Thickness:

Pad Dimensions:

• Settling Time:

< ns (0.1 dB)

[1]

Absolute Maximum Ratings

Description

The TC950 is a GaAs monolithic

microwave integrated circuit

(MMIC) switch designed for low

insertion loss and high isolation

from DC to 75 GHz. It is intend-

ed for use as a general-purpose,

single-pole, double-throw (SP-

DT) switch. One series and two

shunt pHEMTs per throw typi-

cally provide 2.6 dB insertion

loss and 29 dB isolation at 50

GHz. This IC is fabricated in

MWTC’s advanced 0.12-µm gate-

length GaAs pHEMT process.

Symbol

V_sel

Parameters/Conditions

Min.

Max.

Units

Select Voltages 1 & 2

RF Input Power

−3.5

+3.5

+17

150

volts

dBm

°C

P_in

T_ch

T_bs

Maximum Channel Temperature

Die Backside Temperature

Storage Temperature

[2]

−55

−65

+85

+165

°C

T_stg

°C

Maximum Assembly Temperature

(for 60 seconds maximum)

T_max

+300

°C

Notes:

1.Operation in excess of any one of these conditions may result in permanent

damage to this device.

2.MTTF>1x10⁶hours @ T_bs=85°C. Operation in excess of maximum backside

temperature (T_bs) will degrade MTTF.

12 3 4 5 6 7...10

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