Agilent 1GC1-8048
40–72 GHz Doubler
TC225
Data Sheet
Features
• P = + 15 dBm
IN
• Wide Bandwidth:
40–72 GHz
Usable to 80+ GHz
• Low Conversion Loss:
13 dB typical
• Low 1/2 and 3/2 spurs:
–23 dBc typical
Chip Size:
760 × 760 µm (29.9 × 29.9 mils)
± 10 µm (± 0.4 mils)
127 ± 15 µm (5.0 ± 0.6 mils)
80 × 80 µm (3.2 × 3.2 mils)
Chip Size Tolerance:
Chip Thickness:
Pad Dimensions:
[1]
Absolute Maximum Ratings
Description
Symbol Parameters/Conditions
Min.
Max.
Units
The TC225 is a balanced diode
frequency doubler consisting of
two Schottky diodes and a co-
planar balun structure. The
doubler provides 15 dB conver-
PIN
Input Power:[2]
Voltage Bias, Vdc = ± 1.5 V
Voltage Bias, Vdc = ± 1 V
Current Bias, Idc = ± 9 mA
Current Bias, Idc = ± 6 mA
DC Voltage
+15
+15.5
+15.8
+16.3
1.5
dBm
dBm
dBm
dBm
volts
mA
st
sion loss and –17.5 dBc 1 and
rd
3
order feedthru for input fre-
quencies between 20 and 33.5
GHz.
VDC
IDC
–1.5
–9
DC Current
9
This IC is fabricated in WPTC’s
InGaP/GaAs heterojunction bi-
polar transistor (HBT) process
that provides excellent unifor-
mity, reliability and 1/f noise
performance.
TA
Backside Temperature[3]
Maximum Assembly Temperature[4]
Storage Temperature
–55
75
°C
Tmax
300
165
°C
Tstg
–65
°C
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this
device. TA = 25°C except for Tmax, and Tstg
.
2. Most doubler users operate the device at or near Pmax. Therefore, we have given maximum
power for voltage biasing and current biasing. See the notes for discussion of tradeoffs in-
volved.
3. For MTTF> 106 hours. Operation in excess of TA will degrade MTTF.
4. Sixty–second maximum.
1