Datasheet > AFSC5G35D37

AFSC5G35D37

更新时间： 2024-04-09 19:00:16

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	412K
描述
Airfast Power Amplifier Module, 3400-3600 MHz, 29 dB, 5 W Avg.

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AFSC5G35D37 数据手册

Document Number: AFSC5G35D37

Rev. 3, 05/2019

NXP Semiconductors

Technical Data

Power Amplifier Module for LTE and

AFSC5G35D37

The AFSC5G35D37 is a fully integrated Doherty power amplifier module

designed for wireless infrastructure applications that demand high

performance in the smallest footprint. Ideal for applications in massive MIMO

systems, outdoor small cells, and low power remote radio heads. The

field--proven LDMOS power amplifiers are designed for TDD and FDD LTE

systems.

3400–3600 MHz, 29 dB, 5 W Avg.

AIRFAST POWER AMPLIFIER

MODULE



Typical LTE Performance: P_out= 5 W Avg., V_DD= 30 Vdc, 1  20 MHz LTE,

Input Signal PAR = 8 dB @ 0.01% Probability on CCDF.⁽¹⁾

Carrier Center

Frequency

Gain

(dB)

ACPR

(dBc)

PAE

(%)

3400 MHz

3500 MHz

3600 MHz

29.2

29.3

29.4

–31.4

–32.8

–31.0

38.8

39.2

38.6

1. All data measured with device soldered in NXP reference circuit.

10 mm  6 mm Module

Features



Frequency: 3400–3600 MHz

Advanced high performance in--package Doherty

Fully matched (50 ohm input/output, DC blocked)

Designed for low complexity analog or digital linearization systems

 2018–2019 NXP B.V.

AFSC5G35D37

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...12

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