AFE10004
SBASA60 – DECAEMFBEE1R02000240
SBASA60 – DECEMBER 2020
www.ti.com
AFE10004 4-Channel Power-Amplifier Precision Analog Front End
With Integrated EEPROM and Gate Bias Switches
1 Features
3 Description
•
Local and remote diode temperature sensor
The AFE10004 is a highly integrated, autonomous,
power-amplifier (PA) precision analog front end (AFE)
that includes four temperature compensation digital-
to-analog converters (DACs), integrated EEPROM,
and gate bias switches. The four DACs are
programmed by four, independent, user-defined,
temperature-to-voltage transfer functions stored in the
internal EEPROM, allowing any temperature effects to
be corrected without additional external circuitry. After
start up, the device operates without intervention from
a system controller to provide a complete system for
setting and compensating bias voltages in control
applications.
– ±2.5°C accuracy, maximum
– 0.0625°C resolution
Internal EEPROM for autonomous operation
– Four independent transfer functions storage
– Device configuration storage
– Open space for user storage
Four analog outputs
– Four monotonic DACs: 1.22-mV resolution
– Automatically configured output ranges:
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Positive output voltage: 5.5 V, maximum
Negative output voltage: –10 V, minimum
– High current drive capability:
The AFE10004 has four gate bias outputs that are
switched on and off through dedicated control pins.
The gate bias switches are designed for fast
response. In combination with the device PA_ON pin,
this fast response enables correct power sequencing
and protection of depletion-mode transistors, such as
GaAs and GaN.
•
•
Source up to 100 mA
Sink up to 20 mA
– High capacitive load tolerant: up to 15 µF
Gate bias on and off control switches
– Two programmable off voltages
•
•
Two auxiliary DACs: 1.22-mV resolution
The function integration and wide operating
temperature range make the AFE10004 an excellent
choice as an all-in-one, autonomous bias control
circuit for the power amplifiers found in RF systems.
The flexible DAC output ranges and built-in
sequencing features let the device be used as a
biasing controller for a large variety of transistor
technologies, such as LDMOS, GaAs, and GaN.
Contact TI sales for the full data sheet.
– Fast switching time: 50 ns, typical
– Low resistance: 3 Ω, maximum
Built-in sequencing control
Internal 2.5-V reference
SPI and I2C interfaces: 1.7-V to 3.6-V operation
•
•
•
– SPI: 4-wire Interface
– I2C: Eight selectable slave addresses
Specified temperature range: –40°C to +125°C
Operating temperature range –40°C to +150°C
•
•
Device Information
PART NUMBER
PACKAGE(1)
BODY SIZE
2 Applications
AFE10004
QFN (24)
4.00 mm x 4.00 mm
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•
•
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Radar
Electronic warfare
Communications payload
Defense radio
Active antenna system mMIMO (AAS)
Outdoor backhaul unit
(1) For all available packages, see the package option
addendum at the end of the data sheet.
4
DRVEN1
CLAMP1 (10mF)
OUT1 (100nF)
DAC1 (10mF)
2
0
-2
-4
-6
-8
-10
-12
-10
-5
0
5
10
15
Time (ms)
20
25
30
35
40
amc7
Gate Bias Switch Response
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
Product Folder Links: AFE10004
Copyright © 2020 Texas Instruments Incorporated
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