Datasheet > AF9503PS

AF9503PS

更新时间： 2024-11-24 19:30:07

品牌	Logo	应用领域
ICT		开关脉冲光电二极管晶体管
页数	文件大小	规格书
5页	205K
描述
Power Field-Effect Transistor, 6A I(D), 40V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

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技术参数
数据手册

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AF9503PS 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.84
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	40 V
最大漏极电流 (ID)：	6 A	最大漏源导通电阻：	0.04 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	最大脉冲漏极电流 (IDM)：	30 A
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AF9503PS 数据手册

AF9503P

P-Channel Enhancement Mode Power MOSFET

Features

General Description

- Simple Drive Requirement

- Low On-Resistance

The advanced power MOSFET provides the designer

with the best combination of fast switching, rugged

- Fast Switching Performance

- Pb Free Plating Product

device

design,

low

on-resistance

and

cost-effectiveness.

The SOP-8 package is universally preferred for all

commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC

converters.

Product Summary

BV_DSS(V)

R_DS(ON)(mΩ)

I_D(A)

-40

-6

Pin Assignments

Pin Descriptions

Pin Name

Description

Source

Gate

Drain

SOP-8

Ordering information

A X 9503P X

Packing

Package

S: SOP-8

Feature

F :MOSFET

Blank : Tube or Bulk

A : Tape & Reel

This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of

this product. No rights under any patent accompany the sale of the product.

Rev. 1.0 Dec 13, 2005

1/5

12 3 4 5

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