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AEC-Q101-002 PDF预览

AEC-Q101-002

更新时间: 2024-11-04 12:35:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 91K
描述
Surface Mount ESD Capability Rectifier

AEC-Q101-002 数据手册

 浏览型号AEC-Q101-002的Datasheet PDF文件第2页浏览型号AEC-Q101-002的Datasheet PDF文件第3页浏览型号AEC-Q101-002的Datasheet PDF文件第4页 
MSE1PB, MSE1PD, MSE1PG, MSE1PJ  
www.vishay.com  
Vishay General Semiconductor  
Surface Mount ESD Capability Rectifier  
FEATURES  
• Very low profile - typical height of 0.65 mm  
• Ideal for automated placement  
• Oxide planar chip junction  
• Low forward voltage drop, low leakage  
current  
Available  
eSMP® Series  
• ESD capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified  
Top View  
Bottom View  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MicroSMP  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: MicroSMP  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
1.0 A  
VRRM  
IFSM  
100 V, 200 V, 400 V, 600 V  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
20 A  
0.925 V  
1 μA  
commercial grade  
Base P/NHM3  
automotive grade  
VF at IF = 1.0 A  
IR  
- halogen-free, RoHS-compliant, and  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix  
Package  
Diode variations  
MicroSMP  
Single die  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
TYPICAL APPLICATIONS  
General purpose, polarity protection, and rail-to-rail  
protection in both consumer and automotive applications.  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
MSE1PB  
SB  
MSE1PD  
SD  
MSE1PG  
SG  
MSE1PJ  
SJ  
UNIT  
Device marking code  
Max. repetitive peak reverse voltage  
Max. average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
100  
200  
400  
600  
V
A
1.0  
20  
Peak forward surge current 10 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
0.940  
1.016  
0.834  
0.925  
-
MAX.  
UNIT  
IF = 0.5 A  
-
1.1  
-
TA = 25 °C  
IF = 1.0 A  
IF = 0.5 A  
IF = 1.0 A  
(1)  
Max. instantaneous forward voltage  
VF  
V
TA = 125 °C  
0.98  
1.0  
50  
-
TA = 25 °C  
(2)  
Max. reverse current  
Rated VR  
IR  
μA  
TA = 125 °C  
3.7  
Typical reverse recovery time  
Typical junction capacitance  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
4.0 V, 1 MHz  
trr  
780  
5
ns  
CJ  
-
pF  
Notes  
(1)  
(2)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
Revision: 14-Aug-13  
Document Number: 89067  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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